Product Information

IRF630FP

Name: IRF630FP
Brand: STMicroelectronics
SKU: IRF630FP_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

IRF630FP electronic component of STMicroelectronics

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Datasheet

Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220FP Tube

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

62: USD 1.2116 ea
Line Total: USD 75.12

0 - Global Stock

MOQ: 62 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 62 Multiples : 1 IRF630FP STMicroelectronics	62 : USD 1.2116 100 : USD 1.0936

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Additional Infomation About Product

IRF630 IRF630FP N-channel 200V - 0.35 - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type V R I DSS DS(on) D IRF630 200V <0.40 9A IRF630FP 200V <0.40 9A Extremely high dv/dt capability 3 3 2 2 Very low intrinsic capacitances 1 1 TO-220 TO-220FP Gate charge minimized Description This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications Switching application Order codes Part number Marking Package Packaging IRF630 IRF630 TO-220 Tube IRF630FP IRF630FP TO-220FP Tube August 2006 Rev 9 1/14 www.st.com 14Contents IRF630 - IRF630FP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 13 2/14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 9 A 9 A
Vds - Drain-Source Breakdown Voltage 200 V 200 V
Rds On - Drain-Source Resistance 400 mOhms 400 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 30 W 30 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Irf630fp Irf630fp
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Rise Time 15 ns 15 ns
Factory Pack Quantity : 50 50
Typical Turn-On Delay Time 10 ns 10 ns