Product Information

HSP061-2N4

HSP061-2N4 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes 2-Line ESD Prot 6 GHz 0.6pF 100nA

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.3139 ea
Line Total: USD 3139

29100 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
94 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 41
Multiples : 1

Stock Image

HSP061-2N4
STMicroelectronics

41 : USD 0.793
150 : USD 0.7215
1000 : USD 0.6435
5000 : USD 0.585

46 - WHS 2


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

HSP061-2N4
STMicroelectronics

1 : USD 0.4983
10 : USD 0.459
30 : USD 0.4346
100 : USD 0.4091
500 : USD 0.3978
1000 : USD 0.3929

29100 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 10000
Multiples : 10000

Stock Image

HSP061-2N4
STMicroelectronics

10000 : USD 0.3139

     
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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HSP061-2 2-line ESD protection for high speed lines Datasheet - production data Benefits High ESD robustness of the equipment Suitable for high density boards Complies with following standards MIL-STD 883G Method 3015-7 Class 3B: 8 kV +63 1 IEC 61000-4-2 level 4: 4)1 / +63 0 15 kV (air discharge) 4)1 / 8 kV (contact discharge) Applications The HSP061-2 series is designed to protect against electrostatic discharge on sub micron Figure 1. Functional schematic (top view) technology circuits driving: HDMI 1.3 and 1.4 1 6 I/O1 I/O1 Digital Video Interface GND I/O2 I/O1 Display Port GND 2 5 V BU S USB 3.0 NC NC Serial ATA 4 I/O2 I/O2 3 QFN 4 leads Ethernet HMI QFN 6 leads Description Features The HSP061-2 is a 2-channel ESD array with a rail-to-rail architecture designed specifically for Flow-through routing to keep signal integrity the protection of high speed differential lines. Ultralarge bandwidth: 6 GHz The ultralow variation of the capacitance ensures Ultralow capacitance: 0.6 pF very low influence on signal-skew. The large Low leakage current: 100 nA at 25 C bandwidth makes it compatible with 5 Gbps. Extended operating junction temperature The HSP061-2M6 is packaged in QFN-6L (1.45 range: -40 C to 150 C x 1.0 mm) with a 500 m pitch. The HSP061-2N4 RoHS compliant is packaged in QFN-4L (1.0 x 0.8 mm) with a 400 m pitch. October 2015 DocID022777 Rev 3 1/12 This is information on a product in full production. www.st.comCharacteristics HSP061-2 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 I Repetitive peak pulse current (8/20 s) 3 A pp T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 100 nA RM RM IEC 61000-4-2, +8 kV contact V Clamping voltage 18 V CL (I = 30 A), measured at 30 ns PP Capacitance (input/output to V = 0 V, F = 200 to 3000 MHz, I/O C 0.6 0.85 pF I/O - GND ground) V = 30 mV OSC Capacitance variation V = 0 V F = 200 to 3000 MHz, I/O C 0.03 0.13 pF I/O - GND (input/output to ground) V = 30 mV OSC HSP061-2M6 5.5 f Cut-off frequency -3 dB GHz C HSP061-2N4 6 2/12 DocID022777 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
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