Product Information

EMIF02-MIC03F2

EMIF02-MIC03F2 electronic component of STMicroelectronics

Datasheet
EMI Filter Beads, Chips & Arrays 2 line EMI fltr/ESD 100pF -40 @ 900MHz
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.1975 ea
Line Total: USD 987.5

9700 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000

 More Buying Options & Price Grid(s)

Availability Price Quantity
9700 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 5000
Multiples : 5000

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EMIF02-MIC03F2
STMicroelectronics

5000 : USD 0.1975

Read More Specifications

     
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RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

EMIF02-MIC03F2 2-line IPAD, EMI filter and ESD protection Datasheet - production data High reliability offered by monolithic integration High reducing of parasitic elements through integration and wafer level packaging Complies with the following standards: IEC 61000-4-2 level 4, on input pins 15 kV (air discharge) 8 kV (contact discharge) IEC 61000-4-2 Level 1, on output pins Flip-Chip package 2 kV (air discharge) 2 kV (contact discharge) MIL STD 883E - Method 3015-6 Class 3 Figure 1. Pin configuration (bump side) and Application basic cell configuration Mobile phones (differential microphone filtering 32 1 and ESD protection). I2 I1 A Description GND B The EMIF02-MIC03F2 is a highly integrated device designed to suppress EMI/RFI noise in all O2 O1 C systems subjected to electromagnetic interferences. The EMIF02 Flip-Chip packaging means the package size is equal to the die size. Low-pass Filter This filter includes an ESD protection circuitry Input Output which prevents damage to the application when subjected to ESD surges up 15 kV. Ri/o = 68 Cline = 100 pF GND GND GND Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Very low PCB space consuming: 1.07 mm x 1.47 mm Very thin package: 0.65 mm TM: IPAD is a trademark of STMicroelectronics. High efficiency in ESD suppression July 2014 DocID11739 Rev 3 1/8 This is information on a product in full production. www.st.comElectrical characteristics EMIF02-MIC03F2 1 Electrical characteristics Table 1. Absolute maximum ratings (T = 25 C) AMB Symbol Parameter Value Unit Tj Maximum junction temperature 125 C Top Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameters I V Breakdown voltage BR IPP I Leakage current V RM RM V Stand-off voltage RM IR VCL VBR VRM IRM V Clamping voltage CL V IRM VRM VBR VCL IR R Dynamic impedance d I Peak pulse current PP IPP R Series resistance between Input & Output I/O C Input capacitance per line line Table 3. Symbol Test condition Min Typ Max Unit V I = 1 mA 6 8 V BR R I V = 3 V per line 500 nA RM RM R Tolerance 20% 68 I/O C V = 0 V 100 pF line R 2/8 DocID11739 Rev 3

HS Compliance

Tariff Desc

8504.50.10 Electrical transformers, static converters (for example, rectifiers) and inductors.

8504.50 COILS, toroidal, having ALL of the following: (a) winding wire dia NOT exceeding 0.25 mm; (b) internal window dia NOT exceeding 40 mm; (c) external dia NOT exceeding 55 mm Op. 17.06.1985 Dec. 13.01.1986 - TC 8532473

8504.90 CORES AND SHAPES, ferrite, iron powder or molybdenum permalloy powder Op. 13.03.1984 Dec. 13.03.1984 - TC 8342777

8547.9 TC 8535449 SHEETING OR SHAPES, electrically insulating, thermally conductive,
being combinations of two OR more of the following:
(a) silicone rubber;
(b) glass fibre;
(c) boron nitride;
(d) polyimide;
(e) copper

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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