Product Information

DA108S1

DA108S1 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes 8 Diode Array
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1

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DA108S1
STMicroelectronics

1 : USD 0.293
N/A

Obsolete
0 - Warehouse 2

MOQ : 20
Multiples : 20

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DA108S1
STMicroelectronics

20 : USD 0.694
500 : USD 0.6331
N/A

Obsolete
0 - Warehouse 3

MOQ : 2000
Multiples : 2000

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DA108S1
STMicroelectronics

2000 : USD 0.6353
N/A

Obsolete
0 - Warehouse 4

MOQ : 1
Multiples : 1

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DA108S1
STMicroelectronics

1 : USD 2.4759
10 : USD 0.9202
100 : USD 0.7365
500 : USD 0.6718
1000 : USD 0.5886
2500 : USD 0.5605
10000 : USD 0.5519
25000 : USD 0.5346
50000 : USD 0.5173
N/A

Obsolete
0 - Warehouse 5

MOQ : 1
Multiples : 1

Stock Image

DA108S1
STMicroelectronics

1 : USD 1.2796
3 : USD 0.8669
36 : USD 0.8209
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Number of Channels
Termination Style
Working Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

DA108S1 DA112S1 Diode array Features Array of 8 or 12 diodes Low input capacitance Suitable for digital line protection Complies with following standards: SO-8 IEC 61000-4-2 Level 4 15kV (air discharge) 8kV (contact discharge) Figure 1. Functional diagram: DA108S1 Applications I/O1 REF1 Protection of logic side of ISDN S-interface Protection of I/O lines of microcontroller I/O2 REF2 Signal conditioning I/O3 REF3 Description Array of 8 or 12 diodes configured by cells of 2 I/O4 REF4 diodes, each cell being used to protect signal line from transient overvoltages by clamping action. As maximum voltage of each diode is 18 V, maximum input voltage range between two I/Os is Figure 2. Functional diagram: DA112S1 either 0 V to 18 V (REF1 = 0 V and REF2 = +18 V) or -9 V to +9 V (REF1 = -9 V and REF2 = +9 V) I/O118 REF1 I/O227 I/O6 I/O336 REF2 I/O445 I/O5 January 2008 Rev 6 1/8 www.st.comCharacteristics DA108S1 / DA112S1 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage (for one single diode) 18 V RRM (1) I Repetitive peak forward current t = 8/20 s 12 A PP p P Power dissipation 0.73 W T Storage temperature range -55 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. The surge is repeated after the device returns to ambient temperature Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to ambient 170 C/W th (j-a) 1. Table 3. Electrical characteristics(T = 25 C) amb Symbol Parameter Max. Unit DA108S1 9 I = 12 A, PP V Peak forward voltage V FP t = 8/20 s p DA112S1 12 V Forward voltage I = 50 mA 1.2 V F F I Reverse leakage current V = 15 V 2 A R R 2/8

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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