Product Information

BZW50-120B

BZW50-120B electronic component of STMicroelectronics

Datasheet
Diode: transil; 5kW; 133V; 23A; bidirectional; R6
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9425 ea
Line Total: USD 2.94

3 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

BZW50-120B
STMicroelectronics

1 : USD 2.9425
10 : USD 2.5999
30 : USD 2.3906
100 : USD 2.1085

65 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BZW50-120B
STMicroelectronics

1 : USD 3.458
3 : USD 3.133
8 : USD 2.236
21 : USD 2.119

Read More Specifications

     
Manufacturer
Product Category
Breakdown Voltage
Semiconductor Structure
Case
Mounting
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Power Dissipation
Leakage Current
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Additional Infomation About Product

BZW50 Datasheet 5 kW TVS Features Peak pulse power: 5000 W (10/1000 s) Stand off voltage range from 10 V to 180 V Unidirectional and bidirectional diode Low clamping factor Fast response time R6 UL497B, file number: QVGQ2.E136224 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. Product status link BZW50 DS0662 - Rev 6 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office. BZW50 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation 5000 W PP P Power dissipation on infinite heatsink 6.5 W I Non repetitive surge peak forward current for unidirectional types 500 A FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C op T Maximum lead temperature for soldering during 10 s at 5 mm from case. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance parameter Symbol Parameter Value Unit R Junction to leads 15 C/W th(j-l) R Junction to ambient on printed circuit. L = 10 mm 65 C/W th(j-a) lead Figure 1. Electrical characteristics (definitions) II II Symbol Parameter II II PPPP FF Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V II RM RM CLCL BRBR RMRM RMRM II RMRM I Peak pulse current II VV VV VV PP RMRM RMRM BRBR CLCL II RR II RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II II PPPP PPPP Figure 2. Pulse definition for electrical characteristics DS0662 - Rev 6 page 2/10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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