Product Information

BDW93CFP

BDW93CFP electronic component of STMicroelectronics

Datasheet
Transistor: NPN; bipolar; Darlington; 100V; 12A; 33W; TO220FP
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5156 ea
Line Total: USD 1.52

657 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
656 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BDW93CFP
STMicroelectronics

1 : USD 1.482
3 : USD 0.9581
10 : USD 0.8476
23 : USD 0.7345
62 : USD 0.6942

3870 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 14
Multiples : 1

Stock Image

BDW93CFP
STMicroelectronics

14 : USD 0.9656
100 : USD 0.8614
500 : USD 0.8237
1000 : USD 0.8072

172 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 40
Multiples : 1

Stock Image

BDW93CFP
STMicroelectronics

40 : USD 1.0052
50 : USD 0.836
100 : USD 0.7624

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Hfe Min
No. Of Transistors
Termination Type
Transistor Type
Voltage Vcbo
Kind Of Package
LoadingGif

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Additional Infomation About Product

BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) 3 2 1 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL T0-220FP EQUIPMENT DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear INTERNAL SCHEMATIC DIAGRAM and switching applications. The complementary PNP type is the BDW94CFP. R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW93CFP PNP BDW94CFP V Collector-Base Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V I Collector Current 12 A C I Collector Peak Current 15 A CM I Base Current 0.2 A B o P 33 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2001 BDW93CFP / BDW94CFP THERMAL DATA o R Thermal Resistance Junction-case Max 3.8 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 100 V 100 A CBO CB o Current (I = 0) V = 100 V T = 150 C 5 mA E CB case I Collector Cut-off V = 80 V 1 mA CEO CE Current (I = 0) B I Emitter Cut-off Current V = 5 V 2mA EBO EB (I = 0) C VCEO(sus)* Collector-Emitter IC = 100 mA 100 V Sustaining Voltage (IB = 0) V * Collector-Emitter I = 5 A I = 20 mA 2 V CE(sat) C B Saturation Voltage I = 10 A I = 100 mA 3 V C B V * Base-Emitter I = 5 A I = 20 mA 2.5 V BE(sat) C B Saturation Voltage IC = 10 A IB = 100 mA 4 V h * DC Current Gain I = 3 A V = 3 V 1000 FE C CE I = 5 A V = 3 V 750 20000 C CE I = 10 A V = 3 V 100 C CE V * Parallel-diode Forward I = 5 A 1.3 2 V F F Voltage I = 10 A 1.8 4 V F h Small Signal Current I = 1 A V = 10 V fe C CE Gain f = 1 MHz 20 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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