Product Information

1.5KE30CA

1.5KE30CA electronic component of STMicroelectronics

Datasheet
Diode: transil; 1.5kW; 30V; 36A; bidirectional; DO201

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.832 ea
Line Total: USD 0.83

778 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

1.5KE30CA
STMicroelectronics

1 : USD 0.5318
10 : USD 0.4331
30 : USD 0.3908
100 : USD 0.3385

778 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

1.5KE30CA
STMicroelectronics

1 : USD 0.832
10 : USD 0.7241
25 : USD 0.6708
55 : USD 0.299
151 : USD 0.2821

9312 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 600
Multiples : 600

Stock Image

1.5KE30CA
STMicroelectronics

600 : USD 0.388
1200 : USD 0.3802

     
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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1.5KE Transil Datasheet production data Features Peak pulse power: 1500 W (10/1000 s) A Breakdown voltage range: From 6.8 V to 440 V Uni and bidirectional types K Low clamping factor Fast response time UL 497B file number: QVGQ2.E136224 DO-201 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. TM:Transil is a trademarks of STMicroelectronics. March 2012 Doc ID 2913 Rev 4 1/10 This is information on a product in full production. www.st.com 10Characteristics 1.5KE 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T = T 1500 W PP j initial amb P Power dissipation on infinite heatsink T = 75 C 5 W amb t = 10 ms Non repetitive surge peak forward current for unidirectional p I 200 A FSM types T = T j initial amb T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j T Maximum lead temperature for soldering during 10s at 5mm from case. 230 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal parameter Symbol Parameter Value Unit R Junction to leads 20 th(j-l) C/W R Junction to ambient on printed circuit. L = 10 mm 75 th(j-a) lead Figure 1. Electrical characteristics - definitions II II II II FF PPPP V Stand-off voltage RM V Breakdown voltage Unidirectional BR V Clamping voltage CL I Leakage current V RM RM II I Peak pulse current PP RR VV VV VV VV FF VV VV VV VV I Breakdown current CLCL BRBR RMRM VV R CLCL BRBR RMRM II RMRM T Voltage temperature II RMRM II coefficient RMRM VV VV VV RMRM BRBR CLCL II V Forward voltage drop F RR II RR R Dynamic impedance D Bidirectional II PPPP II PPPP 2/10 Doc ID 2913 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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