Product Information

S34ML08G301BHB003

S34ML08G301BHB003 electronic component of SkyHigh Memory

Datasheet
NAND Flash

Manufacturer: SkyHigh Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2300: USD 8.3718 ea
Line Total: USD 19255.14

0 - Global Stock
MOQ: 2300  Multiples: 2300
Pack Size: 2300
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 3000
Multiples : 3000

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S34ML08G301BHB003
SkyHigh Memory

3000 : USD 7.4175
5000 : USD 7.3255

     
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8 S34ML08G3 8 Gb, 3 V, 2K Page Size, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density Security 8 Gb (4Gb 2) OTP area Serial number (unique ID) Architecture Hardware program/erase disabled during power transition Architecture (for each 4 Gb device) Volatile and Permanent Block Protection Input / Output Bus Width: 8 bits Electronic Signature Page Size 4 Gb: (2048 + 128) bytes 128-byte spare area Manufacturer ID: 01h Device ID: Follow industry standard for single and stacked Block Size: 64 Pages die implementation 4 Gb: 128 KB + 8 KB Plane Size Operating Temperature 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) Industrial: 40 C to 85 C Device Size Industrial Plus: 40 C to 105 C 4 Gb: Two planes per device or 512 MB Additional Features NAND Flash Interface Multiplane Program and Erase commands Copy Back Program Open NAND Flash Interface (ONFI) 1.0 compliant Multiplane Copy Back Program Address, Data, and Commands multiplexed Reset (FFh) command is required after power-on as a first Supply Voltage command 3.3-V device: V = 2.7 V ~ 3.6 V CC Performance Page Read / Program Package Options Read Page Time (t ): Pb-free and low halogen R 45 s (Typ) / Single Plane 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1 mm) 55 s (Typ) / Multiplane Program time / Multiplane Program time: 350 s (Typ) Block Erase / Multiplane Erase Block Erase time: 4 ms (Typ) Reliability 80,000 Program / Erase cycles (Typ) 10 Year Data retention (Typ) Blocks 0-7 are good at the time of shipment SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-23046 Rev. *F 18 Westlands Road Hong Kong Revised Nov. 13, 2019S34ML08G3 Contents 1. General Description..................................................... 3 10.2 Absolute Maximum Ratings 9, 11 ........................ 19 10.3 Recommended Operating Conditions .................. 19 2. Connection Diagram.................................................... 3 10.4 AC Test Conditions .............................................. 19 3. Pin Description............................................................. 4 10.5 DC Characteristics ............................................... 20 4. Block Diagrams............................................................ 5 10.6 Pin Capacitance ................................................... 20 5. Addressing ................................................................... 6 11. Package Diagrams...................................................... 21 11.1 48-Pin Thin Small Outline Package (TSOP1) ...... 21 6. Read Status Enhanced................................................ 7 11.2 63-Ball, Ball Grid Array (BGA).............................. 22 7. Read ID.......................................................................... 7 12. Ordering Information.................................................. 23 7.1 Read Parameter Page........................................... 8 13. Document History Page ............................................. 24 8. OTP.............................................................................. 11 8.1 OTP Protection.................................................... 11 9. Security Features....................................................... 12 9.1 Volatile Block Protection (VBP) Overview ........... 12 9.2 Permanent Block Protection (PBP) Overview ..... 16 10. Electrical Characteristics.......................................... 19 10.1 Valid Blocks......................................................... 19 Document Number: 002-23046 Rev. *F Page 2 of 24 Page 2 of 24

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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