Product Information

SVF8N65F

Name: SVF8N65F
Brand: Silan
SKU: SVF8N65F_Silan
Availability: OutOfStock
Rating: 5 (11 reviews)

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Datasheet

650V 8A 1.2O@10V,4A 48W N Channel TO-220 MOSFETs ROHS

Manufacturer: Silan

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9062 ea
Line Total: USD 0.91

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 03 Jun to Thu. 06 Jun MOQ : 1 Multiples : 1 SVF8N65F Silan	1 : USD 0.8808 10 : USD 0.7205 50 : USD 0.6416 100 : USD 0.5602 500 : USD 0.5142 1000 : USD 0.4888

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Additional Infomation About Product

The SVF8N65F is a N Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by Silan. It is designed with a TO-220 package and is compliant with with the RoHS (Restriction of Hazardous Substances) directive. This component has an operating voltage of 650V and a maximum drain current of 8A, with a breakdown voltage of 1.2O@10V and a thermal power dissipation of 48W. This MOSFET is ideal for use in switching and amplification applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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Manufacturer Silan Silan
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO220 TO220
Brand Category Silan Silan
Drain Source Voltage Vdss 650 V 650 V
Continuous Drain Current Id 8 A 8 A
Drain Source On Resistance Rdson@Vgs Id 1.2 Ohms @10V , 4A 1.2 Ohms @10V , 4A
Power Dissipation Pd 48 W 48 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Reverse Transfer Capacitance Crss@Vds 3.2 pF @25V 3.2 pF @25V
Type N Channel N Channel
Input Capacitance Ciss@Vds 902.3 pF @25V 902.3 pF @25V
Total Gate Charge Qg@Vgs 14.47 nC @10V 14.47 nC @10V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)