Product Information

UCLAMP3311Z.TNT

UCLAMP3311Z.TNT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes UCLAMP3311Z.TNT 3.3V Z PACKAGE

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.6824
10 : USD 0.5882
100 : USD 0.3483
500 : USD 0.2821
1000 : USD 0.2238
2500 : USD 0.1986
10000 : USD 0.1821
20000 : USD 0.1758
50000 : USD 0.1745
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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uClamp3311Z Ultra Small Clamp 1-Line, 3.3V ESD Protection TM PROTECTION PRODUCTS - Z-PakPROTECTION PRODUCTS Features Description Clamp TVS diodes are designed to protect sensitive High ESD withstand Voltage: +/-14kV (Contact) and electronics from damage or latch-up due to ESD. They +/- 16kV (Air) per IEC 61000-4-2 are designed to replace 0201 size multilayer varistors Able to withstand over 1000 ESD strikes per IEC (MLVs) in portable applications such as cell phones, note- 61000-4-2 Level 4 book computers, and other portable electronics. They Ultra-small 0200200200200201 pack1 pack1 pack1 pack1 packageageageageage features large cross-sectional area junctions for conduct- Protects one data line ing high transient currents. These devices offer desir- Low reverse current: <10nA typical (VR=5V) able characteristics for board level protection including Working voltage: +/- 3.3V fast response time, low operating and clamping voltage, Low capacitance: 6pF typical and no device degradation. Extremely low dynamic resistance: 0.21 Ohms (Typ) Clamp 3311Z is constructed using Semtechs propri- Solid-state silicon-avalanche technology etary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leak- Mechanical Characteristics age currents and capacitance over silicon-avalanche di- SLP0603P2X3A package ode processes. They feature a true operating voltage of Pb-Free, Halogen Free, RoHS/WEEE Compliant 3.3 volts for superior protection when compared to tra- Nominal Dimensions: 0.6 x 0.3 x 0.25 mm ditional pn junction devices. Lead Finish: NiAu Clamp3311Z is in a 2-pin SLP0603P2X3A package. Marking : Marking code It measures 0.6 x 0.3 mm with a nominal height of only Packaging : Tape and Reel 0.25mm. Leads are finished with lead-free NiAu. Each device will protect one line operating at 3.3 volts. It Applications gives the designer the flexibility to protect single lines in applications where arrays are not practical. The Cellular Handsets & Accessories combination of small size and high ESD surge capability Keypads, Side Keys, Audio Ports makes them ideal for use in portable applications such Portable Instrumentation as cellular phones, digital cameras, and MP3 players. Digital Lines Tablet PC Nominal Dimensions Schematic 0.62 0.22 0.32 1 0.16 0.355 BSC 2 0.25 SLP0603P2X3A (Bottom View) Nominal Dimensions (mm) www.semtech.com 2/6/2015 1uClamp3311Z PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 3s0 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 4sAmp pp 1 ESD per IEC 61000-4-2 (Air) V +/- 16 kV ESD 1 ESD per IEC 61000-4-2 (Contact) +/- 14 OTperating Temperature -C40 to +85 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 3V.3 RWM PVunch-Through Voltage I=550A 34.6 4V.4 PT PT SVnap-Back Voltage I=850mA2V. SB SB RIeverse Leakage Current V=13.3V 05.00 0A.0 R RWM CVlamping Voltage I=51A, tp = 8/20s 5V. C PP CClamping Voltage VI=53A, tp = 8/20s 6V. PP CVlamping Voltage I=54A, tp = 8/20s 7V. C PP 2, 3 Dynamic Resistance Rt1p = 100ns 0s.2 Ohm D I/O pin to Gnd 69 pF JCunction Capacitance V = 0V, f = 1MHz j R Notes 1)ESD gun return path connected to ESD ground reference plane. 2)Transmission Line Pulse Test (TLP) Settings: t = 100ns, t = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. p r TLP TLP 1 2 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP www.semtech.com 2015 Semtech Corporation 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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