Product Information

RClamp0532T.TCT

RClamp0532T.TCT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes 2Line Surge PROT for Ethernet Interfaces

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1121 ea
Line Total: USD 1.11

4405 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6830 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.9901
10 : USD 0.8005
100 : USD 0.7692
250 : USD 0.7064
500 : USD 0.6484
1000 : USD 0.5736
3000 : USD 0.5373
6000 : USD 0.5349
9000 : USD 0.518

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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RClamp0532T Low Capacitance RailClamp 2-Line Surge and ESD Protection for Ethernet Interfaces PROTECTION PRODUCTS Description Features Transient Protec tion to R Clamp 0532T is a high per for mance T VS ar ray designed IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contac t) to protec t t wo differential lines from over voltage events IEC 61000-4-4 (EFT ) 4kV (5/50ns) caused by ESD, lightning, CDE (Cable Discharge Events) IEC 61000-4-5 (Lightning) 10A (8/20s) and EFT (elec tr ical fast transients). R Clamp0532T fea- Ver y Small PCB Area tures high surge cur rent capabilit y and may be used to Protec ts t wo H igh-Speed Data Lines protec t Ether net inter faces in M agJacks, communica- Wor k ing Voltage: 5V tions equipment, secur it y cameras, and industr ial equip - Low Capacitance: 0.60pF Typical ment. D ynamic R esistance: 0.020 Ohms ( Typ) S olid-State Silicon-Avalanche Technology R Clamp0532T integrates low capacitance, surge -rated Mechanical Characteristics steer ing diodes with a high power transient voltage sup - pressor ( T VS). The T VS utilizes snap -back or crow-bar SLP1610P4T Pack age technology to minimize device clamping voltage and Pb -Free, Halogen Free, R oHS/WEEE Compliant Nominal Dimensions: 1.6 x 1.0 x 0.40 mm features high surge cur rent capabilit y of 10A (tp=8/20us). Lead Finish: N iPdAu ESD charac ter istics are highlighted by high ESD with- M olding Compound Flammabilit y R ating: UL 94V-0 stand voltage (+/-30kV per IEC 61000-4-2) and ex treme - M ar k ing : M ar k ing Code + Date Code ly low dynamic resistance (0.020 Ohms t ypical). Each Pack aging : Tape and R eel device will protec t t wo lines operating at 5 volts. Applications R Clamp0532T is in a 6-pin SLP1610P4T pack age mea- 1G/2.5G/5G/10G Ether net sur ing 1.6 x 1.0mm with a nominal height of 0.40mm. I ntegrated M agnetics / RJ-45 Connec tors Flow- through pack age design simplifies PCB layout and Central O ffice Equipment maintains signal integr it y on high-speed lines. I ndustr ial Equipment The combination of low clamping, high surge capabilit y, IP Camera and innovative pack age design enables this device to provide the highest level of transient protec tion. Nominal Dimensions Functional Schematic 1.60 1 2 1.00 12 0.50 0.40 3, 4 RClamp0532T Page 1 www.semtech.com Final Datasheet Rev 2.0 Semtech March 17, 2016Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 100 W PK Peak Pulse Cur rent (tp = 8/20s) I 10 A PP (1) ESD per IEC 61000-4-2 (Contac t) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O -40 C to 125 C R everse Stand- O ff Voltage V 5 V R WM Pin 1 or Pin 2 to Pins 3 and 4 I = 10mA, t O O R everse Breakdown Voltage V Pin 1 or Pin 2 to -40 C to 125 C 6.5 9.5 11.5 V BR Pins 3 and 4 Pin 1 or Pin 2 to Pins O Holding Cur rent I T = 25 C 75 150 250 mA H 3 and 4 O T = 25 C 0.01 0.100 A R everse Leak age Cur rent I V = 5V R R WM O T = 125 C 0.03 0.250 A I = 10A, tp = 1.2/50s, PP (2) Clamping Voltage V 6.5 10 V C Pin 1 or Pin 2 to Pins 3 and 4 I = 4A, tp = 0.2/100ns ( TLP) (3) PP ESD Clamping Voltage V 3.5 V C Pin 1 or Pin 2 to Pins 3 and 4 I = 16A, tp = 0.2/100ns ( TLP) PP (3) ESD Clamping Voltage V 3.75 V C Pin 1 or Pin 2 to Pins 3 and 4 tp = 0.2/100ns ( TLP) (3), (4) D ynamic R esistance R 0.020 Ohms DYN Pin 1 or Pin 2 to Pins 3 and 4 V = 0V, f = 1MH z R O Pin 1 or Pin 2 to T = 25 C 1 1.2 pF Pins 3 and 4 Junc tion Capacitance C J V = 0V, f = 1MH z R O T = 25 C 0.6 0.7 pF Pin 1 to Pin 2 Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp0532T Page 2 www.semtech.com Final Datasheet Rev 2.0 Semtech March 17, 2016

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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