Product Information

ECLAMP8052PQTCT

ECLAMP8052PQTCT electronic component of Semtech

Datasheet
ESD Suppressors TVS Diodes Low Capacitance ESD Protection

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2577 ea
Line Total: USD 1.26

3234 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5687 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.2577
10 : USD 1.0453
100 : USD 0.8353
250 : USD 0.8329
500 : USD 0.7285
1000 : USD 0.6099
3000 : USD 0.5826
6000 : USD 0.5826
9000 : USD 0.56

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
Tradename
LoadingGif

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EClamp8052PQ EMIClamp 2-Line Common Mode Filter and Low Capacitance ESD Protection PROTECTION PRODUCTS Features Description Transient Protection to EClamp8052PQ integrates common mode filtering IEC 61000-4-2 (ESD) 30kV (Air), 25kV (Contact) with low capacitance ESD protection and is designed IEC 61000-4-4 (EFT) 4kV (5/50ns) specifically for MIPI, MHL, and USB interfaces. Each IEC 61000-4-5 (Lightning) 6A (8/20s) device provides filtering and ESD protection for one ISO-10605 (ESD) 30kV (Air), 25kV (Contact) high-speed differential pair. Qualified to AEC-Q100, Grade 1 Package design optimized for high speed lines ESD protection and common mode filtering for two EClamp8052PQ is an easily implemented solution for high-speed lines replacing discrete common mode chokes and ESD High differential bandwidth cutoff frequency protection devices in a single package. These devices Low ESD Clamping Voltage utilize silicon avalanche technology for superior ESD Dynamic Resistance: 0.50 Ohms (Typ) and TLP clamping performance. They feature high Solid-State Silicon-Avalanche Technology maximum ESD withstand voltage of +/- 25kV contact, Mechanical Characteristics +/-30kV air discharge per IEC 61000-4-2. The integrated common-mode choke has a typical differential mode SGP1917N5 package cutoff frequency >3GHZ and typical common mode Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 1.9 x 1.70 x 0.55 mm suppression of 10dB at 500MHz and 15dB from 1GHz Molding Compound Flammability Rating: UL 94V-0 to 2.8GHz. Each channel series resistance is 1.8 Ohms Marking : Marking Code + Date Code maximum. Packaging : Tape and Reel EClamp8052PQ is in a 7-pin SGP1917N5 package, Applications measuring 1.9 x 1.7mm with a nominal height of Automotive Applications 0.55mm. The leads have a nominal pin-to-pin pitch of Industrial Equipment 0.50mm. Flow- through package design simplifies PCB USB 2.0 / USB 3.0 layout and maintains signal integrity on high-speed lines. HDMI / MHL MIPI Camera Serial Interface (CSI) MIPI Display Serial Interface (DSI) Pin Configuration Circuit Diagram I/O+ In I/O+ Out I/O+ In I/O+ Out 1 I/O- Out I/O- In I/O- In I/O- Out GND GND EClamp8052PQ Page 1 www.semtech.com Final Datasheet Rev 1.0 Semtech October 4, 2016 External Side Towards Connector Internal Side Towards ICAbsolute Maximum Ratings Rating Symbol Value Units Peak Pulse Current (tp = 8/20s) I 6 A PP (1) ESD per IEC 61000-4-2 (Contact) 25 V kV ESD (1) ESD per IEC 61000-4-2 (Air) 30 (2) ESD per ISO-10605 (Contact) 25 V kV (2) ESD ESD per ISO-10605 (Air) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O -40 C to 125 C Reverse Stand-Off Voltage V 5 V RWM Pin 1 or Pin 2 to Pin 3 I = 1mA, t O O Reverse Breakdown Voltage V -40 C to 125 C 6.5 9 11 V BR Pin 1 or 2 to Pin 3 O Reverse Leakage Current I V = 5V T = 25 C 0.005 0.100 A R RWM I = 1A, tp = 8/20s, PP Clamping Voltage V 12 V C Pin 1 or 2 to Pin 3 I = 6A, tp = 8/20s, PP Clamping Voltage V 17 V C Pin 1 or 2 to Pin 3 I = 4A, tp = 0.2/100ns (TLP) (3) PP ESD Clamping Voltage V 11 V C Pin 1 or 2 to Pin 3 I = 16A, tp = 0.2/100ns (TLP) (3) PP ESD Clamping Voltage V 17 V C Pin 1 or 2 to Pin 3 tp = 0.2/100ns (TLP) (3), (4) Dynamic Resistance R 0.50 Ohms DYN Pin 1 or 2 to Pin 3 V = 0V, f = 1MHz R O Total Channel Capacitance C T = 25 C 0.95 1.2 pF IN Pin 1 or 2 to Pin 3 Differential (SDD21) Cut-Off f 50 Ohm Source and Load Termination 3 GHz 3dB Frequency f = 75MHz 3 dB Common Mode (SCC21) f f = 500MHz 10 dB ATT Attenuation f = 1GHZ - 2.5GHz 20 dB Channel Resistance R Input to Output 1.3 1.8 Ohms CH Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): ESD Gun return path to Horizontal Coupling Plane (HCP) Test conditions: a)150pF/330pF, 330W b) 150pF/330pF, 2kW (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP EClamp8052PQ Page 2 www.semtech.com Final Datasheet Rev 1.0 Semtech October 4, 2016

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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