SEMiX241DH16s Absolute Maximum Ratings Symbol Conditions Values Unit Chip I T =85C 240 A D T = 130 C c j sinus 180 T =100 C 200 A c I T =25C 2250 A TSM j 10 ms T =130 C 1900 A j 2 i t T =25C 25300 As j 10 ms T =130 C 18000 As j V 1700 V SEMiX 13 RSM V 1600 V RRM V 1600 V DRM (di/dt) T = 130 C 100 A/s cr j (dv/dt) T = 130 C 1000 V/s cr j Bridge Rectifier Module T -40 ... 130 C (halfcontrolled) j Module SEMiX241DH16s T -40 ... 125 C stg V 1min 4000 V isol AC sinus 50Hz Features 1s 4800 V Terminal height 17 mm Characteristics Chips soldered directly to isolated Symbol Conditions min. typ. max. Unit substrate UL recognised file no. E63532 Chip V T =25C, I = 300 A 1.9 V j T T Typical Applications* V T = 130 C 0.85 V j T(TO) Input Bridge Rectifier for AC/DC motor r T = 130 C 4m j control T Power supply I I T =130 C, V = V V = V 24 mA DD RD j DD DRM RD RRM t T =25C, I =1 A, di /dt = 1 A/s 1s j G G gd t V = 0.67 * V 2s gr D DRM t T = 130 C 150 s j q I T =25C 150 250 mA j H I T =25C, R =33 300 600 mA j G L V T =25C, d.c. 3V j GT I T =25C, d.c. 150 mA j GT V T = 130 C, d.c. 0.25 V j GD I T = 130 C, d.c. 6mA j GD R per thyristor 0.32 K/W th(j-c) sin. 180 per diode 0.32 K/W Module R per chip K/W th(c-s) per module 0.04 K/W M to heat sink (M5) 3 5 Nm s M to terminals (M6) 2.5 5 Nm t a 5 * 9,81 m/s w350g DH by SEMIKRON Rev. 3 20.03.2013 1SEMiX241DH16s Fig. 4R: Power dissipation per module vs. case Fig. 4L: Power dissipation per module vs. direct current temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 2 Rev. 3 20.03.2013 by SEMIKRON