Product Information

CIG21L2R2MNE

CIG21L2R2MNE electronic component of Samsung

Datasheet
Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 950mA 160mOhm DCR 0805 T/R
Manufacturer: Samsung
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0595 ea
Line Total: USD 178.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May


Multiples : 1

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CIG21L2R2MNE
Samsung


0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May


Multiples : 150000

Stock Image

CIG21L2R2MNE
Samsung


0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

CIG21L2R2MNE
Samsung

3000 : USD 0.0595

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Shielding
Inductance
Tolerance
Maximum DC Current
Self Resonant Frequency
Core Material
Packaging
Brand
Rad Hardened
Case Size
Technology
Failure Rate
Product Height Mm
Military Standard
Operating Temp Range
LoadingGif

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Additional Infomation About Product

Ver. 201306 Multilayer Power Inductor CIG21L Series (2012/ EIA 0805) APPLICATION Mobile phones, DSC, DVC, PDA etc. for DC-DC Converter FEATURES RECOMMENDED LAND PATTERN Low DC resistance Magnetically shielded structure Free of all RoHS-regulated substances Monolithic structure for high reliability DIMENSION Dimension mm TYPE L W T D 0.5+0.2 21 2.00.1 1.250.1 0.90.1 -0.3 DESCRIPTION Size Inductance DC Rated Current A) ( Part no. (inch/mm) (uH) 1MHz Resistance( ) Max. CIG21LR47MNE 0805/2012 0.47 20 % 0.080 20 % 1.30 CIG21L1R0MNE 0805/2012 1.0 20 % 0.110 20 % 1.15 CIG21L1R2MNE 0805/2012 1.2 20 % 0.125 20 % 1.10 CIG21L1R5MNE 0805/2012 1.5 20 % 0.140 20 % 1.05 CIG21L2R2MNE 0805/2012 2.2 20 % 0.160 20 % 0.95 CIG21L3R3MNE 0805/2012 3.3 20 % 0.220 20 % 0.80 CIG21L4R7MNE 0805/2012 4.7 20 % 0.260 20 % 0.75 Rated Current: DC current value when the self-generation of heat rises to 40 (Reference ambient temperature:25 ) Operating temperature range: 40 to +125C ( Including self-temperature rise) Test equipment: Agilent :E4991A+16092A CHARACTERISTIC DATA 1) Frequency characteristics (Typ.) 2) DC Bias characteristics (Typ.)Ver. 201306 PRODUCT IDENTIFICATION CI G 21 L 1R0 M N E (1) (2) (3) (4) (5) (6) (7) (8) Chip Inductor Power Inductor (1) (2) Dimension Product Series L:Low RDC Type) (3) (4) ( Inductance R47:0.47uH, R0:1.0uH) Tolerance M: (5) ( 1 (6) ( 20%) Thickness option(N:Standard, A:Thinner than standard, B:Thicker than standard) (7) Packaging(C:paper tape, E:embossed tape) (8) RECOMMENDED SOLDERING CONDITION REFLOW SOLDERING FLOW SOLDERING PACKAGING Packaging Style Quantity(pcs/reel) Embossed Taping 3,000 Any data in this sheet are subject to change, modify or discontinue without notice. The data sheets include the typical data for design reference only. If there is any question regarding the data sheets, please contact our sales personnel or application engineers.

HS Compliance

Tariff Desc

8504.50 COILS, toroidal, having ALL of the following: (a) winding wire dia NOT exceeding 0.25 mm; (b) internal window dia NOT exceeding 40 mm; (c) external dia NOT exceeding 55 mm Op. 17.06.1985 Dec. 13.01.1986 - TC 8532473

8504.90 CORES AND SHAPES, ferrite, iron powder or molybdenum permalloy powder Op. 13.03.1984 Dec. 13.03.1984 - TC 8342777

Samsung may also be referenced as

SAMSUNG
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP

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