Product Information

UM6K31NTN

UM6K31NTN electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 0.25A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1241 ea
Line Total: USD 0.62

499 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
499 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1241
50 : USD 0.0995
150 : USD 0.0872
500 : USD 0.078
3000 : USD 0.0706
6000 : USD 0.0669

6212 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.3404
10 : USD 0.2541
100 : USD 0.1483
1000 : USD 0.1069
3000 : USD 0.0909
9000 : USD 0.0897
24000 : USD 0.0897
45000 : USD 0.0863

812 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 235
Multiples : 1
235 : USD 0.423

2716 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 235
Multiples : 1
235 : USD 0.4176
250 : USD 0.4052
500 : USD 0.3971

6843 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 350
Multiples : 1
350 : USD 0.1128
500 : USD 0.1037
1000 : USD 0.1005
2000 : USD 0.097

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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SemiconductorThe UM6K31NTN is a MOSFET Trans MOSFET N-CH manufactured by ROHM Semiconductor that works at 60 Volt maximum and 0.25 Amp maximum. It is a highly efficient device that is used in electronic circuits to control the flow of electric current. It is a P-channel type of FET that has a breakdown voltage of -60 V with a minimum gate-source voltage of -4 V. It features low on-resistance and low gate charge, making it a great choice for applications that require voltage and current control. It also features very low capacitance, allowing it to quickly switch on and off. This makes it an ideal component for applications that require fast response times and reliable timing.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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