Product Information

UDZUTE-175.6B

UDZUTE-175.6B electronic component of ROHM

Datasheet
ROHM Semiconductor ESD Suppressors DIODE ZENER 9.99V SNGL 2%200MW 2PIN
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3979 ea
Line Total: USD 0.4

946 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
946 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.2817
100 : USD 0.2139
1000 : USD 0.1748
3000 : USD 0.1506
9000 : USD 0.1322
24000 : USD 0.1311
45000 : USD 0.1116
99000 : USD 0.1092

2910 - WHS 2


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 407
Multiples : 1
407 : USD 0.2181
500 : USD 0.2138

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Cd - Diode Capacitance
Package / Case
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Data Sheet Low capacitance ESD Protection Diode UDZU5.6B lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 1.250.1 0.10.1 0.05 0.9MIN. lFeatures 1)Small mold type. (UMD2) 2)Low Capacitance 3)By chip-mouter,automatic mouting is possible. UMD2 lConstruction lStructure 0.70.2 Silicon epitaxial planer 0.30.05 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation P 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Operation temperature Topr -55 to +150 C lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =5mA Zener voltage 5.49 - 5.73 V Z Z Reverse current I - - 1.0 A V =2.5V R R f=1MHz,V =0V Capacitance between terminals C - 8.0 - pF t R *Zener voltage(Vz) shall be measured at 40ms after loading current. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/3 1.70.1 2.50.2 0.8MIN. 2.1Data Sheet UDZU5.6B 10 10000 Ta=150 C Ta=25 C 1000 Ta=125 C Ta=125 C 1 100 Ta= -25 C Ta=75 C 10 0.1 Ta=75 C 1 Ta=25 C 0.01 0.1 5 5.5 6 6.5 0 1 2 3 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEV (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R 10 100 f=1MHz Ta=25 C 9 I =5mA Z 8 n=30pcs 7 6 10 5 AVE:5.59V 4 3 2 1 1 0 0 1 2 3 4 5 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 140 20 Ta=25 C Ta=25 C 18 120 f=1MHz V =2.5V R V =0V 16 R n=30pcs n=10pcs 100 14 AVE:118.29pA 12 80 10 60 8 AVE:9.4pF 6 40 4 20 2 0 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (pA) ZENER CURRENT:Iz(mA) R TERMINALS:Ct(pF) CAPACITANCE REVERSE CURRENT:I (pA) ZENER VOLTAGE:Vz(V) R BETWEEN TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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