Product Information

TFZVTR2.0B

TFZVTR2.0B electronic component of ROHM

Datasheet
Zener Diodes Pd 500mW Iz(mA) Vz(V) 2.02-2.2
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1944 ea
Line Total: USD 0.19

14524 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
14524 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.1944
10 : USD 0.1265
100 : USD 0.0713
500 : USD 0.0587
1000 : USD 0.0495
3000 : USD 0.0471

7628 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 695
Multiples : 1
695 : USD 0.1242
1000 : USD 0.1218

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vz - Zener Voltage
Voltage Tolerance
Voltage Temperature Coefficient
Zener Current
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Series
Height
Length
Product
Width
Brand
Ir - Reverse Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

TFZV2.0B Zener Diode Data sheet Outline P 500 mW D Feature Inner Circuit High reliability Small mold type Application Packaging Specification Packing Embossed Tape Voltage regulation Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Structure Taping Code TR Silicon Epitaxial Planar Marking B0 (T = 25) Absolute Maximum Rating a Parameter Symbol Limits Unit Power dissipation P 500 mW D Junction temperature T 150 j Storage temperature T -55 150 stg www.rohm.com 1/6 2017 ROHM Co., Ltd. All rights reserved. 2017/01/12 Rev.002TFZV Series Data sheet Characteristic (T = 25C) a Symbol Zener Voltage:V (V) Dynamic Impedance:Z () Reverse Current:I (A) Z R Z P/N I (mA) I (mA) V (V) MIN. MAX. MAX. MAX. z z R TFZV 2.0B 2.020 2.200 20 140 20 120 0.5 TFZV 2.2B 2.220 2.410 20 120 20 120 0.7 TFZV 2.4B 2.430 2.630 20 100 20 120 1.0 TFZV 2.7B 2.690 2.910 20 100 20 100 1.0 TFZV 3.0B 3.010 3.220 20 80 20 50 1.0 TFZV 3.3B 3.320 3.530 20 70 20 20 1.0 TFZV 3.6B 3.600 3.845 20 60 20 10 1.0 TFZV 3.9B 3.890 4.160 20 50 20 5 1.0 TFZV 4.3B 4.170 4.430 20 40 20 5 1.0 TFZV 4.7B 4.550 4.800 20 25 20 5 1.0 TFZV 5.1B 4.940 5.200 20 20 20 5 1.5 TFZV 5.6B 5.450 5.730 20 13 20 5 2.5 TFZV 6.2B 5.960 6.270 20 10 20 5 3.0 TFZV 6.8B 6.490 6.830 20 8 20 2 3.5 TFZV 7.5B 7.070 7.450 20 8 20 0.5 4.0 TFZV 8.2B 7.780 8.190 20 8 20 0.5 5.0 TFZV 9.1B 8.570 9.010 20 8 20 0.5 6.0 TFZV 10B 9.410 9.900 20 8 20 0.2 7.0 TFZV 11B 10.500 11.050 10 10 10 0.2 8.0 TFZV 12B 11.440 12.030 10 12 10 0.2 9.0 TFZV 13B 12.550 13.210 10 14 10 0.2 10 TFZV 15B 13.890 14.620 10 16 10 0.2 11 TFZV 16B 15.250 16.040 10 18 10 0.2 12 TFZV 18B 16.820 17.700 10 23 10 0.2 13 TFZV 20B 18.630 19.590 10 28 10 0.2 15 TFZV 22B 20.640 21.710 5 30 5 0.2 17 TFZV 24B 22.610 23.770 5 35 5 0.2 19 TFZV 27B 24.970 26.260 5 45 5 0.2 21 TFZV 30B 27.700 29.130 5 55 5 0.2 23 TFZV 33B 30.320 31.880 5 65 5 0.2 25 TFZV 36B 32.790 34.490 5 75 5 0.2 27 TFZV 39B 35.360 37.190 5 85 5 0.2 30 V test time is 40ms. Z Marking P/N Marking P/N Marking TFZV 2.0B B0 TFZV 9.1B BG TFZV 2.2B B1 TFZV 10B BH TFZV 2.4B B2 TFZV 11B BI TFZV 2.7B B3 TFZV 12B BJ TFZV 3.0B B4 TFZV 13B BK TFZV 3.3B B5 TFZV 15B BL TFZV 3.6B B6 TFZV 16B BM TFZV 3.9B B7 TFZV 18B BN TFZV 4.3B B8 TFZV 20B BO TFZV 4.7B B9 TFZV 22B BP TFZV 5.1B BA TFZV 24B BQ TFZV 5.6B BB TFZV 27B BR TFZV 6.2B BC TFZV 30B BS TFZV 6.8B BD TFZV 33B BT TFZV 7.5B BE TFZV 36B BU TFZV 8.2B BF TFZV 39B BV www.rohm.com 2/6 2017 ROHM Co., Ltd. All rights reserved. 2017/01/12 Rev.002

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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