Product Information

SCT3080AL

SCT3080AL electronic component of ROHM

Datasheet
SCT3080AL
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 7.7057 ea
Line Total: USD 30.82

0 - Global Stock
MOQ: 4  Multiples: 4
Pack Size: 4

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 14.092
5 : USD 13.14
10 : USD 12.7015
50 : USD 11.7912
100 : USD 11.3695
250 : USD 10.9478

0 - WHS 2


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 4
Multiples : 4
4 : USD 7.7057
10 : USD 7.217

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

SiC Power Devices and Modules Application Note Issue of August 2014 14103EBY01 Contents 1. SiC Semiconductors .............................................................................................................................................. 3 1.1 Property of SiC material .......................................................................................................................... 3 1.2 Advantages of SiC material for power device applications......................................................... 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .............................................................................. 5 2.1 Device structure and characteristics .................................................................................................... 5 2.2 Forward characteristics of SiC-SBD ................................................................................................... 5 2.3 Reverse recovery characteristics of SiC-SBD .................................................................................. 6 3. Characteristics of SiC-MOSFET ...................................................................................................................... 8 3.1 Device structure and characteristics .................................................................................................... 8 3.2 Specific on-resistance ............................................................................................................................... 9 3.3 Vd-Id characteristics .............................................................................................................................. 10 3.4 Gate voltage Vgs to drive SiC-MOSFET and Rdson ................................................................. 10 3.5 Vg-Id characteristics .............................................................................................................................. 11 3.6 Turn-on characteristics.......................................................................................................................... 12 3.7 Turn-off characteristics ......................................................................................................................... 13 3.8 Internal gate resistance .......................................................................................................................... 14 3.9 Gate drive circuit .................................................................................................................................... 15 3.10 Forward characteristics of body diode and reverse conduction .......................................... 15 3.11 Reverse recovery characteristics of body diode ....................................................................... 17 4. Characteristics of SiC power modules ......................................................................................................... 18 4.1 Characteristics of SiC power module ............................................................................................... 18 4.2 Topologies ................................................................................................................................................. 18 4.3 Switching characteristics ...................................................................................................................... 19 4.3.1 Id and Tj dependencies of switching characteristics .......................................................... 19 4.3.2 Gate resistance dependency of switching characteristics ................................................. 20 4.3.3 Gate voltage dependency of switching characteristics ...................................................... 21 4.4 Comparison of switching loss with Si-IGBT power modules ................................................. 22 4.4.1 Comparison of total switching loss with Si-IGBT power modules ............................... 22 4.4.2 Comparison of diode reverse recovery loss (Err) with Si-IGBT power modules .... 22 4.4.3 Comparison of turn-on loss (Eon) with Si-IGBT ................................................................ 23 4.4.4 Comparison of turn-off loss (Eoff) with Si-IGBT power modules ............................... 24 5. Reliability of SiC-SBD ..................................................................................................................................... 25 5.1 dV/dt and dI/dt break-down ................................................................................................................ 25 5.2 Results of SiC-SBD reliability tests ................................................................................................. 25 6. Reliability of SiC-MOSFET ............................................................................................................................ 26 6.1 Reliability of gate insulating layer .................................................................................................... 26 1

HS Compliance

Tariff Desc

8203.20 crimpers but NOT including crimping tools put up in packs containing electrical connectors TC8532098

8205.40.00 TC0844020 SCREWDRIVERS

8203.30.00 TC9900293 NIPPERS diagonal spring loaded with insulated handles length NOT exceeding 125mm

8203.20.00 TC0844180 PLIERS being ANY of
a aviation slip pliers
b bent nose pliers
c combination pliers,length NOT less than 210mm
d cutting pliers
e end nipper pliers
f groove joint pliers
g linesman pliers, length NOT less than 210mm
h lock grip pliers
i long nose pliers
j long reach pliers
k round nose pliers
l slip joint pliers
m snap ring pliers
n straight nose pliers
o welding clamp pliers
p wire stripper plier

8204.11.00 TC9810512 SPANNERS drop forged

8204.12.00 TC0110440 SPANNERS AND WRENCHES adjustable non calibrated

8204.11.00 TC0107157 SPANNERS AND WRENCHES non adjustable being ANY:
a combination open end and ring
b open end
c ring

8205.70.00 TC0302773 CLAMPS

8205.70.00 TC0302754 VICES

8204.11.00 TC0405019 HAND TOOLS being EITHER of the following
a allen key sets
b hex keys

9017.30.00 50 Micrometers callipers and gauges Free

8204.20.00 TC0009108 SOCKETS AND/OR SOCKET ACCESSORIES being ANY of
a sockets
b reducers
c tommy bars with sliding T handles
d extensions
e ratchets with coupler
f reversible ratchets
g couplers
h universal joints
i L-handles
j speed braces
k converters
l swivel handles
m driving handles socket drivers
n ratchet adaptors

8203.10.00 TC0302774 FILES OR RASPS

8206.00.00 TC0831549 KITS TOOL comprising not LESS than ANY two of
a allen keys
b chisels
c crimpers
d files
e hammers
f multi grips
g pliers
h punches
i saws
j screwdrivers
k shears
l snips
m sockets
n spanners
o wrenches

8425.42.00 TC9404347 JACKS, hand, hydraulic, having a maximum capacity of 2500kg

8207.50.00 TC9600818 DRILL BITS MASONARY having BOTH the following
a slotted shank
b hammer proof carbide tip

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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