Product Information

RTQ020N05FRATR

RTQ020N05FRATR electronic component of ROHM

Datasheet
MOSFET, AEC-Q101, N-CH, 45V, TSMT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4257 ea
Line Total: USD 2.13

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 1
5 : USD 0.4257
10 : USD 0.3265
100 : USD 0.2511
500 : USD 0.2112
1000 : USD 0.1854
5000 : USD 0.1749

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

RTQ020N05FRA Datasheet Nch 45V 2A Small Signal MOSFET llOutline SOT-457T V 45V DSS SC-95 R (Max.) 190m DS(on) TSMT6 I 2A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 8 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170207 - Rev.002 RTQ020N05FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 140 190 GS D Static drain - source *4 R V = 4.0V, I = 2A - 150 210 m DS(on) GS D on - state resistance V = 2.5V, I = 2A - 200 280 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *4 Y V = 10V, I = 2A 1.6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170207 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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