Product Information

RSQ015P10FRATR

Name: RSQ015P10FRATR
Brand: ROHM
SKU: RSQ015P10FRATR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RSQ015P10FRATR electronic component of ROHM

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Datasheet

MOSFET, AEC-Q101, P-CH, -100V, SOT-457T

Manufacturer: ROHM

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4735 ea
Line Total: USD 1.47

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1 Multiples : 1 RSQ015P10FRATR ROHM	1 : USD 1.4288 10 : USD 1.1351 100 : USD 0.8496 500 : USD 0.7266 1000 : USD 0.5548 5000 : USD 0.516

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Additional Infomation About Product

RSQ015P10 FRA Pch -100V -1.5A Power MOSFET Data Sheet Outline (6) V 100V DSS TSMT6 (5) (4) R (Max.) 470m DS(on) I 1.5A (1) D (2) P 1.25W D (3) Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 5) AEC-Q101 Qualified 2 BODY DIODE Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking ZN Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage V 100 DSS *1 Continuous drain current I 1.5 A D *2 Pulsed drain current A I 6.0 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.C 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.C 1/11Data Sheet RSQ015P10FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 109 - mV/C temperature coefficient T referenced to 25C j I V = 100V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 3.2 - mV/C temperature coefficient T referenced to 25C j V = 10V, I = 1.5A - 350 470 GS D V = 4.5V, I = 0.75A - 380 510 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 0.75A - 400 540 GS D V = 10V, I = 1.5A, T =125 C - 610 850 GS D j R Gate input resistannce f = 1MHz, open drain - 8.5 - G *5 Transconductance V = 10V, I = 1.5A 1.5 4.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2016.06 - Rev.C 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category MOSFET MOSFET
Transistor Polarity P Channel P Channel
Brand Rohm Rohm
Continuous Drain Current Id - 1.5 A - 1.5 A
Drain Source Voltage Vds - 100 V - 100 V
On Resistance Rdson 0.35 Ohms 0.35 Ohms
Rdson Test Voltage Vgs - 10 V - 10 V
Threshold Voltage Vgs - 2.5 V - 2.5 V
Power Dissipation Pd 1.25 W 1.25 W
Transistor Case Style SOT - 457T SOT - 457T
No. Of Pins 6Pins 6Pins
Operating Temperature Max 150 C 150 C
Automotive Qualification Standard AEC - Q101 AEC - Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)