Product Information

RRQ045P03TR

RRQ045P03TR electronic component of ROHM

Datasheet
MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -4.5A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9744 ea
Line Total: USD 0.97

2401 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2961 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8519
10 : USD 0.7048
100 : USD 0.5648
500 : USD 0.4924
1000 : USD 0.42
3000 : USD 0.3963
6000 : USD 0.3939
9000 : USD 0.3785
24000 : USD 0.3773

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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RRQ045P03 Datasheet Pch -30V -4.5A Small Signal MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 35m DS(on) TSMT6 I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking UB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 4.5 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170410 - Rev.002 Not Recommended for New Designs RRQ045P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4.5A - 25 35 GS D Static drain - source *4 R V = -4.5V, I = -2.2A - 34 48 m DS(on) GS D on - state resistance V = -4.0V, I = -2.2A - 38 53 GS D R Gate resistance f = 1MHz, open drain - 14 - G Forward Transfer *4 Y V = -10V, I = -4.5A 3.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170410 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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