RFN20NS6SFHTL ROHM

Data Sheet Super Fast Recovery Diode RFN20NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications RFN20 NS6S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=47C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.25 1.55 Forward voltage F F V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 40 60 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20NS6S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 1400 V =600V R I =20A F Tj=25 C Tj=25 C 1350 100 1300 1250 AVE:1281mV AVE:53.3nA 10 1200 1150 1 1100 I DISPERSION MAP V DISPERSION MAP R F 1000 350 f=1MHz f=1MHz 345 V =0V R Tj=25 C 340 335 100 330 325 320 10 315 AVE:322pF 310 305 300 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) CAPACITANCE BETWEEN R TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R