X-On Electronics has gained recognition as a prominent supplier of RFN1L7STE25 diodes - general purpose, power, switching across the USA, India, Europe, Australia, and various other global locations. RFN1L7STE25 diodes - general purpose, power, switching are a product manufactured by ROHM. We provide cost-effective solutions for diodes - general purpose, power, switching, ensuring timely deliveries around the world.

RFN1L7STE25 ROHM

Name: RFN1L7STE25
Brand: ROHM
SKU: RFN1L7STE25_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RFN1L7STE25 electronic component of ROHM

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Part No.	RFN1L7STE25
Manufacturer:	ROHM
Category:	Diodes - General Purpose, Power, Switching
Description:	ROHM Semiconductor Diodes - General Purpose, Power, Switching Diode Switching 700V 0.8A
Datasheet:	RFN1L7STE25 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1500: USD 0.1636 ea
Line Total: USD 245.4

Availability - 0

MOQ: 1500 Multiples: 1500
Pack Size: 1500

RFN1L7STE25 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 11 Jun to Thu. 13 Jun MOQ : 1 Multiples : 1	1 : USD 0.4566 10 : USD 0.399 100 : USD 0.3186 500 : USD 0.2668 1000 : USD 0.1438 1500 : USD 0.1253 9000 : USD 0.1196 24000 : USD 0.1196 49500 : USD 0.1162

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We are delighted to provide the RFN1L7STE25 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN1L7STE25 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN1L7S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 2.0 2.60.2 Applications General rectification 86 65 0.10.02 0.1 PMDS 2.00.2 Features 1.50.2 1)Small power mold type. PMDS Structure 2)Low switching loss ROHM : PMDS 3)Low forward voltage JEDEC : SOD-106 Manufacture date Construction Taping dimensions (Unit : mm) Silicon epitaxial planer 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (TI=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V D0.5 700 V RM Reverse voltage V Direct voltage 700 V R Glass epoxy substrate mounted Average rectified forward current Io Tl=115C 0.8 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 15 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =0.8A Forward voltage V 1.15 1.5 V F F V =700V Reverse current I 0.01 1 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr 45 80 ns F R R Thermal resistance Rth(j-l) junction to lead 23 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 5.50.05 1.750.1 120.2 4.2Data Sheet RFN1L7S 10 10000 Tj=150 C 1000 Tj=150 C Tj=125 C 1 Tj=125 C 100 Tj=75 C Tj=75 C 0.1 10 Tj=25 C Tj=25 C 1 0.01 0 100 200 300 400 500 600 700 0 500 1000 1500 2000 2500 FORWARD VOLTAGEV (mV) F REVERSE VOLTAGE V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1300 100 f=1MHz Tj=25 C 1250 I =0.8A F n=20pcs 1200 1150 10 1100 1050 1000 AVE:1075.5mV 950 1 900 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 1000 40 Tj=25 C Tj=25 C f=1MHz V =700V 35 R V =0V R n=20pcs n=10pcs 100 30 25 AVE:26.4pF 10 20 AVE:17.3nA 15 1 10 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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