RE1E002SP Datasheet Pch -30V -250mA Small Signal MOSFET llOutline SOT-416FL V -30V DSS SC-89 R (Max.) 1.4 DS(on) EMT3F I 250mA D P 150mW D llFeatures llInner circuit 1) Drive circuits can be simple. 2) Built-in G-S Protection Diode. 3) AEC-Q101 Qualified. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCL Marking WP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 250 mA D *1 I Pulsed drain current 500 mA DP Gate - Source voltage V 20 V GSS *2 P Power dissipation 150 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2020 ROHM Co., Ltd. All rights reserved. 20200518 - Rev.003 RE1E002SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -20.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.1 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -250mA - 0.9 1.4 GS D V = -4.5V, I = -150mA - 1.4 2.1 GS D Static drain - source *3 R V = -4V, I = -150mA - 1.6 2.4 DS(on) GS D on - state resistance V = -10V, I = -250mA GS D - 1.2 1.7 T = 125 j Forward Transfer *3 Y V = -10V, I = -150mA 200 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20200518 - Rev.003 2020 ROHM Co., Ltd. All rights reserved.