X-On Electronics has gained recognition as a prominent supplier of RCX330N25 mosfet across the USA, India, Europe, Australia, and various other global locations. RCX330N25 mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RCX330N25 ROHM

RCX330N25 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RCX330N25
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET Nch 250V 33A MOSFET
Datasheet: RCX330N25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

18: USD 2.275 ea
Line Total: USD 40.95

Availability - 485
Ships to you between
Tue. 04 Jun to Mon. 10 Jun
MOQ: 18  Multiples: 1
Pack Size: 1
Availability Price Quantity
591 - WHS 1


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 3.358
10 : USD 2.8405
25 : USD 2.737
100 : USD 2.415
250 : USD 2.277
500 : USD 1.8285
5000 : USD 1.7825

235 - WHS 2


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 34
Multiples : 1
34 : USD 2.9585
50 : USD 2.8458
100 : USD 2.7492

485 - WHS 3


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 18
Multiples : 1
18 : USD 2.275
50 : USD 1.9662
100 : USD 1.885
200 : USD 1.8687
500 : USD 1.7225

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Factory Pack Quantity :
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RCX330N25 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX330N25 and other electronic components in the MOSFET category and beyond.

RCX330N25 Nch 250V 33A Power MOSFET Datasheet l Outline V 250V DSS TO-220FM R (Max.) 105mW DS(on) I 33A D (3) (2) P 40W (1) D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX330N25 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 33 A c D Continuous drain current *1 T = 100C A I 17.9 c D *2 Pulsed drain current I 132 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 74.8 mJ AS *3 Avalanche current I 16.5 A AR T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W D a Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 1/12Data Sheet RCX330N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.13 C/W thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS Zero gate voltage I - - 10 mA DSS drain current T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 16.5A - 77 105 GS D Static drain - source *4 V = 10V, I = 16.5A R mW GS D DS(on) on - state resistance - 165 230 T = 125C j Forward transfer admittance g V = 10V, I = 16.5A 10 20 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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