Product Information

RB095T-40

RB095T-40 electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers SCHOTTKY 40V 6A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.3065
10 : USD 1.1294
100 : USD 0.8666
500 : USD 0.7725
1000 : USD 0.6525
2500 : USD 0.6191
5000 : USD 0.598
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

Data Sheet Schottky barrier diode RB095T-40 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 45 V RM Reverse voltage (DC) V 40 V R 6 Average rectified forward current (*1) Io A 100 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.55 V I =3A F F I Reverse current - - 0.1 mA V =40V R R Thermal impedance -- 3 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.E 1/3 Not Recommended for New DesignsRB095T-40 Data Sheet Electrical characteristic curves 1000 10 1000000 Ta=150 Ta=125 f=1MHz Ta=150 100000 Ta=-25 10000 Ta=125 Ta=75 1 100 1000 Ta=25 Ta=75 100 Ta=25 10 0.1 10 1 Ta=-25 0.1 0.01 0.01 1 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R R R F F 500 200 650 Ta=25 Ta=25 180 I =3A V =40V F R Ta=25 640 490 n=30pcs 160 n=30pcs f=1MHz 630 V =0V R 140 n=10pcs 620 480 120 610 100 600 470 80 590 60 580 460 AVE:472.9mV 40 AVE:14.2uA 570 20 AVE:617.9pF 560 450 0 550 V DISPERSION MAP I DISPERSION MAP F R Ct DISPERSION MAP 1000 300 30 Ta=25 I =0.5A F Ifsm 250 1cyc 25 I =1A R Irr=0.25*I 8.3ms 8.3ms R n=10pcs 200 1cyc 20 8.3ms 100 150 15 100 10 50 5 AVE:11.40ns AVE:178.0A 10 0 0 110 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 100 10 IM=100mA I =3A F Ifsm t 1ms time Rth(j-a) 10 D=1/2 DC 300us 100 5 Si(=180) 1 Rth(j-c) 0 10 0.1 0.001 0.01 0.1 1 10 100 1000 02 46 8 10 1 10 100 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENT : Io(A) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F FORWARD CURRENT:I (A) FSM F REVERSE CURRENT:I (uA) R TRANSIENT REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER FORWARD CURRENT:I (A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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