Product Information

R6042JNZ4C13

R6042JNZ4C13 electronic component of ROHM

Datasheet
MOSFET NCH 600V 42A POWER
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.4346 ea
Line Total: USD 12.43

362 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
310 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 12.4346
10 : USD 11.7939
25 : USD 10.3582
50 : USD 9.8598
250 : USD 9.1005
600 : USD 8.6734
3000 : USD 8.3293

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

R6042JNZ4 Datasheet Nch 600V 42A Power MOSFET llOutline TO-247G V 600V DSS R (Max.) 0.104 DS(on) I 42A D P 495W D llFeatures llInner circuit 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching applications Packing Tube Packing code C13 Marking R6042JNZ4 Basic ordering unit (pcs) 600 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 42 A c D *2 I Pulsed drain current 126 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 8.9 A AS *3 E Avalanche energy, single pulse 871 mJ AS Power dissipation (T = 25C) P 495 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20181201 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. R6042JNZ4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 0.25 /W thJC R Thermal resistance, junction - ambient - - 30 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I - - 100 A DSS drain current T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 5.5mA 5.0 6.0 7.0 V GS(th) DS GS D V = 15V, I = 21A GS D Static drain - source *5 R - 0.080 0.104 DS(on) on - state resistance T = 25C j Gate resistance R f = 1MHz, open drain - 1.2 - G www.rohm.com 2/11 20181201 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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