Product Information

ES6U41T2R

ES6U41T2R electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.9398
10 : USD 0.813
100 : USD 0.2434
500 : USD 0.1957
1000 : USD 0.1554
2500 : USD 0.144
5000 : USD 0.1367
8000 : USD 0.1253
24000 : USD 0.1211
N/A

Obsolete
0 - WHS 2

MOQ : 52
Multiples : 1
52 : USD 0.2095
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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ES6U41 Datasheet Nch 30V 1.5A Small Signal MOSFET + Schottky Barrier Diode llOutline SOT-563T V 30V DSS R (Max.) 240m DS(on) WEMT6 I 1.5A D P 0.8W D llFeatures llInner circuit 1) Nch MOSFET and shottky barrier diode are put in WEMT6 package. 2) High-speed switching and Low on- resistance. 3) Low voltage drive(2.5V drive) 4) Built in Low V schottky barrier diode. F llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking U41 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a < MOSFET > Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS V Gate - Source voltage 12 V GSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6.0 A DP I Continuous source current (body diode) 0.75 A S *1 I Pulsed source current (body diode) 6.0 A SP *2 P Power dissipation 0.7 W/element D T Junction temperature 150 j www.rohm.com 1/12 2016 ROHM Co., Ltd. All rights reserved. 20160711 - Rev.001 ObsoleteES6U41 Datasheet llAbsolute maximum ratings (T = 25C) a < Diode > Parameter Symbol Value Unit V Repetitive peak reverse voltage 25 V RM V Reverse voltage 20 V R I Forward current 0.5 A F *3 I Forward current surge peak 2.0 A FSM *2 P Power dissipation 0.5 W/element D T Junction temperature 150 j < MOSFET + Diode > Parameter Symbol Value Unit *2 P Power dissipation 0.8 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a < MOSFET > Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current V V = 10V, I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS D V = 4.5V, I = 1.5A - 170 240 GS D Static drain - source *4 R V = 4V, I = 1.5A - 180 250 m DS(on) GS D on - state resistance V = 2.5V, I = 1.5A - 240 340 GS D Forward Transfer *4 Y V = 10V, I = 1.5A 1.5 - - S fs DS D Admittance www.rohm.com 2/12 20160711 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Obsolete

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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