Product Information

BS2100F-E2

BS2100F-E2 electronic component of ROHM

Datasheet
ROHM Semiconductor Gate Drivers 600V Hi voltage High Low-side Gate Driver
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7109 ea
Line Total: USD 3.71

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.3578

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 3.7109
10 : USD 1.3176
100 : USD 0.9718
500 : USD 0.8589
1000 : USD 0.6774
2500 : USD 0.6013
10000 : USD 0.5785

Read More Specifications

     
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RoHS - XON
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Supply Voltage - Min
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Additional Infomation About Product

600V High voltage High & Low-side, Gate Driver BS2100F General Description Key Specifications The BS2100F is a monolithic high and low side gate drive High-side floating supply voltage: 600V IC, which can drive high speed power MOSFET and IGBT Output voltage range: 10V to 18V driver with bootstrap operation. Min Output Current Io+/Io-: 60mA/130mA The floating channel can be used to driven an N-channel Turn-on/off time: 220ns(Typ) power MOSFET or IGBT in the high side configuration Dead time: 160ns(Typ) which operates up to 600V. Delay Matching: 50ns(Max) The logic inputs can be used 3.3V and 5.0V. Offset supply leakage current: 50A (Max) The Under Voltage Lockout (UVLO) circuit prevents Operating temperature range: -40C to +125C malfunction when VCC and VBS are lower than the Package specified threshold voltage. SOP-8 5.00mm x 6.20mm x 1.50mm Features Floating Channels for Bootstrap Operation to +600V Gate drive supply range from 10V to 18V Built-in Under Voltage Lockout for Both Channels 3.3V and 5.0V Input Logic Compatible Matched Propagation Delay for Both Channels Output in phase with input Applications MOSFET and IGBT high side driver applications Typical Application Circuits Up to 600V VCC LIN LIN VB HO HIN HIN TO TO VS VCC LOAD LORD COM LO Figure 1. Typical Application Circuit Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays . www.rohm.com TSZ02201-0Q3Q0BZ00260-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/16 TSZ2211114001 2.FEB.2015 Rev.002 Not Recommended for New DesignsBS2100F Pin Configuration (TOP VIEW) 1 8 VB LIN HIN 2 7 HO 3 6 VCC VS COM 4 5 LO Figure 2. Pin Configuration Pin Description Pin No. Symbol Function 1 LIN Logic input for low side gate driver output 2 HIN Logic input for high side gate driver output 3 VCC Low side supply voltage 4 COM Low side return 5 LO Low side gate drive output 6 VS High side floating supply return 7 HO High side gate drive output 8 VB High side floating supply Block Diagram VB UV DETECT HO DRV R Q PULSE R HV FILTER LEVEL S SHIFTER VS HIN PULSE GENERATOR SHOOT- VCC THROUGH PREVENTION UV DETECT DRV LO DELAY LIN COM Figure 3. Functional Block Diagram www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. TSZ02201-0Q3Q0BZ00260-1-2 2/16 TSZ2211115001 2.FEB.2015 Rev.002 Not Recommended for New Designs

HS Compliance

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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