BR93G66FJ-3GTE2

Datasheet Serial EEPROM series Standard EEPROM Micr oWire BUS EEPROM (3-Wire) BR93G66-3 General Description BR93G66-3 is serial EEPROM of Serial 3-Line Interface Method. They are dual organization (by 16bit or 8bit) and it is selected by the input of ORG PIN. Packages W(Typ) x D(Typ)x H(Max) Features Not Recommended for 3-Line Communications of chip select, serial clock, New Designs serial data input / output (the case where input and output are shared) DIP-T8 TSSOP-B8 Operations available at High Speed 3MHz clock 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm (4.5V to 5.5V) High Speed Write available (Write Time 5ms Max Same package and pin configuration from 1Kbit to 16Kbit 1.7V to 5.5V Single Power Source Operation Address Auto Increment Function at Read Operation SOP8 TSSOP-B8J Prevention of Write Error 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Write Prohibition at Power On Write Prohibition by Command Code Prevention of Write Error at Low Voltage Self-Timed Programming Cycle Program Condition Display by READY / BUSY SOP- J8 MSOP8 Dual Organization: by 16 bit (X16) or 8 bit (X8) 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm Compact Package SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J VSON008X2030 More than 40 years data retention More than 1 million Write Cycles SSOP-B8 VSON008X2030 Initial Delivery State all addresses FFFFh (X16) or 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm FFh (X8) BR93G66-3 Power Source VSON008 (1) Capacity Bit Format Type DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 X2030 Voltage 4Kbit 25616 or 5128 BR93G66-3 1.7V to 5.5V (1) DIP-T8 is not halogen free package. Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays. www.rohm.com TSZ02201-09190G100040-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.004 BR 9 3 G 6 6 - 3 Absolute Maximum Ratings Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C Permissible Pd mW Dissipation 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C Storage Tstg -65 to +150 C Temperature Operating Topr -40 to +85 C Temperature The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not under -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature (1) Not Recommended for New Designs. Memory Cell Characteristics (V =1.7V to 5.5V) CC Limit Parameter Unit Conditions Min Typ Max (2) Write Cycles 1,000,000 - - Times Ta=25C (2) Data Retention 40 - - Years Ta=25C Initial data in all addresses are either FFFFh(X16) or FFh(X8) upon delivery. (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limit Unit Supply Voltage Vcc 1.7 to 5.5 V Input Voltage V 0 to Vcc IN www.rohm.com TSZ02201-09190G100040-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 15 001 11.Jun.2019 Rev.004