Product Information

R1LP0108ESN-5SI#B1

R1LP0108ESN-5SI#B1 electronic component of Renesas

Datasheet
SRAM SRAM 1MB X8 5V SOP 55NS -40TO85C

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.036 ea
Line Total: USD 3.04

14956 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14345 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 3.036
10 : USD 2.438
100 : USD 2.2425
500 : USD 2.2425
1000 : USD 2.07
5000 : USD 2.07
10000 : USD 2.07
25000 : USD 2.07

     
Manufacturer
Product Category
Memory Size
Access Time
Maximum Clock Frequency
Interface Type
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Packaging
Supply Current - Max
Organisation
Hts Code
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R1LP0108E Series 1Mb Advanced LPSRAM (128k word x 8bit) R10DS0270EJ0200 Rev.2.00 2019.10.29 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesass high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher density, higher performance and low power consumption. The R1LP0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP. Features Single 4.5V~5.5V power supply Small stand-by current: 0.6A (5.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1 and CS2 Common Data I/O Three-state outputs: OR-tie Capability OE prevents data contention on the I/O bus Ordering Information Access Orderable part name Temperature range Package Shipping container time R1LP0108ESN-5SI B* Tube (Magazine) 525-mil 32-pin plastic SOP Embossed tape R1LP0108ESN-5SI S* R1LP0108ESA-5SI B Tray * 8mm13.4mm 32-pin 55 ns -40 ~ +85C plastic sTSOP R1LP0108ESA-5SI S Embossed tape * R1LP0108ESF-5SI B* Tray 8mm20mm 32-pin plastic TSOP Embossed tape R1LP0108ESF-5SI S* Note 1. = Revision code for Assembly site change, etc. (= 0, 1, etc.) R10DS0270EJ029200 Rev.2.00 Page 1 of 11 2019.10.29 R1LP0108E Series Pin Arrangement NC 1 32 Vcc A16 2 31 A15 A14 3 30 CS2 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 32-pin SOP A3 9 24 OE A2 10 23 A10 A1 11 22 CS1 A0 12 21 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 GND 16 17 DQ3 A11 1 32 OE A9 2 31 A10 A8 3 30 CS1 A13 4 29 DQ7 WE 5 28 DQ6 CS2 6 27 DQ5 A15 7 26 DQ4 Vcc 8 25 DQ3 32-pin sTSOP NC 9 24 GND A16 10 23 DQ2 A14 11 22 DQ1 A12 12 21 DQ0 A7 13 20 A0 A6 14 19 A1 A5 15 18 A2 A4 16 17 A3 A11 1 32 OE A9 2 31 A10 A8 3 30 CS1 A13 4 29 DQ7 WE 5 28 DQ6 CS2 6 27 DQ5 A15 7 26 DQ4 Vcc 8 25 DQ3 32-pin TSOP NC 9 24 GND A16 10 23 DQ2 A14 11 22 DQ1 A12 12 21 DQ0 A7 13 20 A0 A6 14 19 A1 A5 15 18 A2 A4 16 17 A3 R10DS0270EJ029200 Rev.2.00 Page 2 of 11 2019.10.29

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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