Product Information

ISL6144IRZA

ISL6144IRZA electronic component of Renesas

Datasheet
Hot Swap Voltage Controllers W/ANNEAL 20LD 5X5 QF N ORING FET CONTRLR

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.59 ea
Line Total: USD 7.59

505 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
462 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

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ISL6144IRZA
Renesas

1 : USD 7.59
10 : USD 6.9805
25 : USD 6.6585
100 : USD 5.9455
250 : USD 5.6695
490 : USD 5.2325
980 : USD 4.761
2940 : USD 4.761
5390 : USD 4.6115

     
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Product Category
RoHS - XON
Icon ROHS
Product
Current Limit
Supply Voltage - Max
Supply Voltage - Min
Number of Channels
Supply Current
Operating Supply Current
Operating Temperature Range
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Input / Supply Voltage - Max
Input / Supply Voltage - Min
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Cnhts
Hts Code
Mxhts
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DATASHEET ISL6144 FN9131 Rev 7.00 High Voltage ORing MOSFET Controller October 6, 2011 The ISL6144 ORing MOSFET Controller and a suitably sized Features N-Channel power MOSFET(s) increases power distribution Wide Supply Voltage Range +9V to +75V efficiency and availability when replacing a power ORing diode in high current applications. Transient Rating to +100V In a multiple supply, fault tolerant, redundant power distribution Reverse Current Fault Isolation system, paralleled similar power supplies contribute equally to Internal Charge Pump Allows the use of N-Channel the load current through various power sharing schemes. MOSFET Regardless of the scheme, a common design practice is to HS Comparator Provides Very Fast <0.3s Response include discrete ORing power diodes to protect against reverse Time to Dead Shorts on Sourcing Supply. HS Comparator current flow should one of the power supplies develop a also has Resistor-adjustable Trip Level catastrophic output short to ground. In addition, reverse current can occur if the current sharing scheme fails and an individual HR Amplifier allows Quiet, <100s MOSFET Turn-off for Power Supply Slow Shut Down power supply voltage falls significantly below the others. Open Drain, Active Low Fault Output with 120s Delay Although the discrete ORing diode solution has been used for some time and is inexpensive to implement, it has some Provided in Packages Compliant to UL60950 (UL1950) drawbacks. The primary downside is the increased power Creepage Requirements dissipation loss in the ORing diodes as power requirements for QFN Package: systems increase. Another disadvantage when using an ORing - Compliant to JEDEC PUB95 MO-220 diode would be failure to detect a shorted or open ORing diode, QFN - Quad Flat No Leads - Package Outline jeopardizing power system reliability. An open diode reduces - Near Chip Scale Package footprint, which improves the system to single point of failure while a diode short might PCB efficiency and has a thinner profile pose a hazard to technical personnel servicing the system while unaware of this failure. Pb-Free (RoHS Compliant) The ISL6144 can be used in 9V to 75V systems having similar Applications power sources and has an internal charge pump to provide a ORing MOSFET Control in Power Distribution Systems floating gate drive for the N-Channel ORing MOSFET. The High Speed (HS) Comparator protects the common bus from N + 1 Redundant Distributed Power Systems individual power supply shorts by turning off the shorted feeds File and Network Servers (12V and 48V) ORing MOSFET in less than 300ns and ensuring low reverse current. Telecom/Datacom Systems An external resistor-programmable detection level for the HS Comparator allows users to set the N-Channel MOSFET V - V trip point to adjust control sensitivity to power OUT IN supply noise. The Hysteretic Regulating (HR) Amplifier provides a slow turn- off of the ORing MOSFET. This turn-off is achieved in less than 100s when one of the sourcing power supplies is shutdown slowly for system diagnostics, ensuring zero reverse current. This slow turn-off mechanism also reacts to output voltage droop, degradation, or power-down. An open drain FAULT pin will indicate that a fault has occurred. The fault detection circuitry covers different types of failures including dead short in the sourcing supply, a short of any two ORing MOSFET terminals, or a blown fuse in the power distribution path. FN9131 Rev 7.00 Page 1 of 30 October 6, 2011ISL6144 Ordering Information PART NUMBER PART TEMP. RANGE PACKAGE PKG. (Notes 2, 3) MARKING (C) (Pb-free) DWG. ISL6144IVZA (Note 1) ISL61 44IVZ -40 to +105 16 Ld TSSOP M16.173 ISL6144IRZA (Note 1) ISL6144 IRZ -40 to +105 20 Ld 5x5 QFN L20.5x5 ISL6441EVAL1Z Evaluation Platform NOTES: 1. Add -T* suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6144. For more information on MSL please see techbrief TB363. Pinouts ISL6144 ISL6144 (16 LD TSSOP) (20 LD 5x5 QFN) TOP VIEW TOP VIEW GATE 1 16 VOUT 20 19 18 17 16 2 15 VIN COMP 1 15 VIN VOUT 3 14 VSET HVREF HVREF 2 14 COMP 4 13 NC NC NC 3 13 VSET 5 12 NC NC NC 4 12 NC 6 11 NC NC NC 5 11 NC 7 10 NC NC 67 8 9 10 8 9 FAULT GND Pin Descriptions TSSOP QFN PIN PIN SYMBOL FUNCTION DESCRIPTION 1 19 GATE External FET Gate Drive Allows active control of external N-Channel FET gate to perform ORing function. 2 1 VIN Power Supply Connection Chip bias input. Also provides a sensing node for external FET control. 3 2 HVREF Chip High Voltage Reference Low side of floating high voltage reference for all of the HV chip circuitry. 8 7 GND Chip Ground Reference Chip ground reference point. 99 FAULT Fault Output Provides an open drain active low output as an indication that a fault has occurred: GATE is OFF (GATE < V + 0.37V) or other types of faults IN resulting in V - V > 0.41V. IN OUT 14 13 VSET Low Side Connection for Resistor connected to COMP provides adjustable Vd - Vs trip level along Trip Level with pin COMP. 15 14 COMP High Side Connection for HS Resistor connected to V provides sense point for the adjustable Vd - Vs OUT Comparator Trip Level trip level along with pin VSET. 16 15 VOUT Chip Bias and Load Provides the second sensing node for external FET control and chip output Connection bias. 4, 5, 6, 7, 3, 4, 5, 6, 8, NC No Connection 10, 11, 10, 11, 12, 12, 13 16, 17, 18, 20 FN9131 Rev 7.00 Page 2 of 30 October 6, 2011 NC NC GND GATE NC NC FAULT NC NC NC

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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