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70V24S20PFG

70V24S20PFG electronic component of Renesas

Datasheet
SRAM Chip Async Dual 3.3V 64K-Bit 4K x 16 20ns 100-Pin TQFP

Manufacturer: Renesas
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70V24S20PFG
Renesas

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HIGH-SPEED 3.3V 8/4K x 18 DUAL-PORT IDT70V35/34S/L 8/4K x 16 DUAL-PORT IDT70V25/24S/L STATIC RAM Features Separate upper-byte and lower-byte control for multiplexed True Dual-Ported memory cells which allow simultaneous bus compatibility reads of the same memory location IDT70V35/34 (IDT70V25/24) easily expands data bus width High-speed access to 36 bits (32 bits) or more using the Master/Slave select IDT70V35/34 when cascading more than one device Commercial: 15/20/25ns (max.) M/S = VIH for BUSY output flag on Master Industrial: 20ns M/S = VIL for BUSY input on Slave IDT70V25 BUSY and Interrupt Flag Commercial: 15/20/25/35/55ns (max.) On-chip port arbitration logic Industrial: 20/25ns Full on-chip hardware support of semaphore signaling IDT70V24 between ports Commercial: 15/20/25/35/55ns (max.) Fully asynchronous operation from either port Industrial: 20ns LVTTL-compatible, single 3.3V (0.3V) power supply Low-power operation Available in a 100-pin TQFP (IDT70V35/24) & (IDT70V25/24), IDT70V35/34S IDT70V35/34L 86-pin PGA (IDT70V25/24) and 84-pin PLCC (IDT70V25/24) Active: 430mW (typ.) Active: 415mW (typ.) Industrial temperature range (-40C to +85C) is available Standby: 3.3mW (typ.) Standby: 660W (typ.) for selected speeds IDT70V25/24S IDT70V25/24L Green parts available, see ordering information Active: 400mW (typ.) Active: 380mW (typ.) Standby: 3.3mW (typ.) Standby: 660W (typ.) Functional Block Diagram R/WL R/WR UBL UBR LBL LBR CEL CER OER OEL , (5) (5) I/O9R-I/O17R I/O9L-I/O17L I/O I/O Control Control (4) (4) I/O0R-I/O8R I/O0L-I/O8L (2,3) (2,3) BUSYL BUSYR (1) (1) A12L A12R Address MEMORY Address Decoder ARRAY Decoder A0L A0R 13 13 ARBITRATION INTERRUPT CER CEL SEMAPHORE OER OEL LOGIC R/WL R/WR SEMR SEML (3) (3) INTR M/S INTL NOTES: 5624 drw 01 1. A12 is a NC for IDT70V34 and for IDT70V24. 2. (MASTER): BUSY is output (SLAVE): BUSY is input. 3. BUSY outputs and INT outputs are non-tri-stated push-pull. 4. I/O0x - I/O7x for IDT70V25/24. 5. I/O8x - I/O15x for IDT70V25/24. AUGUST 2015 1 DSC-5624/8 2015 Integrated Device Technology, Inc.IDT70V35/34S/L (IDT70V25/24S/L) High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description The IDT70V35/34 (IDT70V25/24) is a high-speed 8/4K x 18 (8/4K feature controlled by CE permits the on-chip circuitry of each port to enter x16) Dual-Port Static RAM. The IDT70V35/34 (IDT70V25/24) is de- a very low standby power mode. signed to be used as a stand-alone Dual-Port RAM or as a combination Fabricated using CMOS high-performance technology, these de- MASTER/SLAVE Dual-Port RAM for 36-bit (32-bit) or wider memory vices typically operate on only 430mW (IDT70V35/34) and 400mW system applications results in full-speed, error-free operation without the (IDT70V25/24) of power. need for additional discrete logic. The IDT70V35/34 (IDT70V25/24) is packaged in a plastic 100-pin This device provides two independent ports with separate control, Thin Quad Flatpack. The IDT70V25/24 is packaged in a ceramic 84-pin address, and I/O pins that permit independent, asynchronous access for PGA and 84-Pin PLCC. reads or writes to any location in memory. An automatic power down (1,2,3,4) Pin Configurations Index 100 9998 979695949392919089888786 8584 838281807978 7776 N/C 1 N/C 75 2 N/C 74 N/C I/O8L 3 73 N/C I/O17L 4 72 N/C 5 71 I/O11L A5L I/O12L 6 70 A4L I/O13L 7 69 A3L I/O14L 8 68 A2L Vss 9 67 A1L I/O15L 10 66 A0L IDT70V35/34PF I/O16L 11 65 INTL (5) PN100 VDD 12 64 BUSYL 63 Vss 13 Vss 100-Pin TQFP 62 I/O0R 14 M/S (6) Top View 61 I/O1R 15 BUSYR 60 I/O2R 16 INTR 59 VDD 17 A0R 58 I/O3R 18 A1R 57 I/O4R 19 A2R 56 I/O5R 20 A3R 55 I/O6R 21 A4R 54 I/O8R 22 N/C 53 I/O17R 23 N/C 52 N/C 24 N/C 51 N/C 25 N/C 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 5624 drw 02 NOTES: 1. A12 is a NC for IDT70V34. 2. All VDD pins must be connected to power supply. 3. All VSS pins must be connected to ground. 4. PN100-1 package body is approximately 14mm x 14mm x 1.4mm. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part marking. 6.422 I/O7R I/O10L I/O9R I/O9L I/O7L I/O10R I/O11R I/O6L I/O12R I/O5L I/O4L I/O13R I/O14R I/O3L I/O15R I/O2L Vss Vss I/O16R I/O1L OER I/O0L R/WR OEL VDD Vss R/WL SEMR SEML CER CEL UBR UBL LBR (1) A12R LBL (1) A12L A11R A11L A10R A10L A9R A9L A8R A8L A7R A7L A6R A6L A5R

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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