Product Information

2SJ496TZ-E

2SJ496TZ-E electronic component of Renesas

Datasheet
Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

33: USD 0.8384 ea
Line Total: USD 27.67

0 - Global Stock
MOQ: 33  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 33
Multiples : 1

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2SJ496TZ-E
Renesas

33 : USD 0.8384

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous: REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance R = 0.12 typ. (at V = 10 V, I = 2.5 A) DS (on) GS D 4 V gate drive devices. Large current capacitance I = 5 A D Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source G 2. Drain 3. Gate 3 2 1 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 5 A D Note 1 Drain peak current I 20 A D (pulse) Body to drain diode reverse drain current I 5 A DR Note 3 Avalanche current I 5 A AP Note 3 Avalanche energy E 2.14 mJ AR Note 2 Channel dissipation Pch 0.9 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 100 s, duty cycle 10% 2. Value at Ta = 25C 3. Value at Tch = 25C, Rg 50 R07DS0433EJ0400 Rev.4.00 Page 1 of 7 Jun 07, 2011 2SJ496 Preliminary Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR) DSS D GS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR) GSS G DS Zero gate voltage drain current I 10 A V = 60 V, V = 0 DSS DS GS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Gate to source cutoff voltage V 1.0 2.0 V I = 1 mA, V = 5 V GS (off) D DS Note 4 Static drain to source on state resistance R 0.12 0.16 I = 2.5 A, V = 10 V DS (on) D GS Note 4 R 0.17 0.24 I = 2.5 A, V = 4 V DS (on) D GS Note 4 Forward transfer admittance y 3 5 S I = 2.5 A, V = 10 V fs D DS Input capacitance Ciss 600 pF V = 10 V DS Output capacitance Coss 290 pF V = 0 GS f = 1 MHz Reverse transfer capacitance Crss 80 pF Turn-on delay time t 10 ns V = 10 V d (on) GS I = 2.5 A Rise time t 25 ns D r R = 12 Turn-off delay time t 95 ns L d (off) Fall time t 55 ns f Body to drain diode forward voltage V 1.0 V I = 5 A, V = 0 DF F GS Body to drain diode reverse recovery t 65 ns I = 5 A, V = 0 rr F GS time di /dt = 50 A/s F Note: 4. Pulse test R07DS0433EJ0400 Rev.4.00 Page 2 of 7 Jun 07, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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