TGS2355 0.5 6.0 GHz 100 Watt GaN Switch Product Description Qorvos TGS2355 is a Single-Pole, Double-Throw (SPDT) reflective switch fabricated on Qorvos QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6 GHz, the TGS2355 provides up to 100 W input power handling with < 1 dB insertion over most of the operating band and greater than 40 dB isolation. The TGS2355 is available in a small 2.14 x 2.50 mm die size and requires very little control current allowing for easy system integration without impacting system power budgets. Product Features The TGS2355 is ideally suited for high power switching Frequency Range: 0.5 - 6 GHz applications across both defense and commercial Insertion Loss: < 1.3 dB applications. Power Handling: 50 dBm (Pulsed) Isolation: 40 dB typical Control Voltages: 0 V/-40 V (from either side of the MMIC) Switching Speed: < 50 nS Reflective Switch Die Dimensions: 2.14 mm x 2.50 mm x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Block Diagram Applications Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching Ordering Information Part No. Description TGS2355 0.5-6 GHz 100 Watt GaN Switch - 1 of 9 - Data Sheet Rev. B Feb 19, 2021 www.qorvo.com TGS2355 0.5 6.0 GHz 100 Watt GaN Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Min Typ Max Units Control Voltage (VC) -50 V Frequency 0.5 6 GHz Control Current (I ) -3.5 / +3.5 mA Input Power Handling C 50 dBm (Pulsed) Power Dissipation 36.8 W Control Voltage -40 V RF Input Power (pulsed, 10% Duty 51 dBm Cycle, 20 s pulse width) Temperature Range -40 25 +85 C Electrical specifications are measured at specified test conditions. Mounting Temperature (30 sec) 320 C Specifications are not guaranteed over all recommended operating Storage Temperature -55 to 150 C conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 0.5 6 GHz P Pulsed Input Power 50 dBm 0.1dB Control Current (I ) 1.0 mA C Insertion Loss On-State 1.0 dB Input Return Loss Common Port Return Loss On-State 15 dB Output Return Loss Switched Port Return Loss On-State 15 dB Isolation Off-State 40 dB Output Return Loss Isolated Port Return Loss Off-State 2.5 dB Switching Speed (10-90%, 90-10%, VC=-20V) 50 ns Control Voltage -40 -48 V Insertion Loss Temperature Coefficient 0.003 dB/ C Notes: 1. Test conditions unless otherwise noted: Temp= +25C. Z = 50 , Vc = 40 V 0 Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance (JC) 1.3 C/W TBASE = 85 C, VC1 = 0 V, VC2 = -40 V, PIN = 100 W, (1,2) P = 29.3 W, Pulsed Power: PW = 20 s, DC = 10 % Channel Temperature (TCH) DISS 123 C 1. MMIC soldered to 20 mil thick Cu-Mo carrier plate using AuSn solder. Thermal resistance is determined from the channel to the back of the die (fixed 85 C temp.). 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 9 - Data Sheet Rev. B Feb 19, 2021 www.qorvo.com