Product Information

TGF2953

TGF2953 electronic component of Qorvo

Datasheet
TriQuint (Qorvo) RF JFET Transistors DC-12GHz 12W 32V GaN P3dB 3GHz 41.2dBm
Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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TGF2953
Qorvo

1 : USD 48.9846
25 : USD 43.5477
100 : USD 39.747
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Operating Temperature Range
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

TGF2953 12 Watt Discrete Power GaN on SiC HEMT Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency Range: DC - 12 GHz 41.2 dBm Nominal PSAT at 3.5 GHz 73.7% Maximum PAE at 3.5 GHz 18.2 dB Nominal Power Gain at 3.5 GHz Bias: V = 32 V, I = 50 mA D DQ Technology: TQGaN25 on SiC Chip Dimensions: 1.01 x 1.14 x 0.10 mm General Description Pad Configuration The TriQuint TGF2953 is a discrete 2.52 mm GaN on Pad No. Symbol SiC HEMT which operates from DC-12 GHz. The 1-2 V / RF IN G TGF2953 is designed using TriQuints proven TQGaN25 3 V / RF OUT D production process. This process features advanced Backside Source / Ground field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2953 typically provides 41.2 dBm of saturated output power with power gain of 18.2 dB at 3.5 GHz. The maximum power added efficiency is 73.7 % which makes the TGF2953 appropriate for high efficiency Ordering Information applications. Part ECCN Description Lead-free and RoHS compliant. TGF2953 EAR99 12 Watt GaN HEMT Datasheet: Rev A 10-22-14 Disclaimer: Subject to change without notice - 1 of 21 - 2014 TriQuint www.triquint.com TGF2953 12 Watt Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage (V ) 100 V DG Drain Voltage Range (V ) 32 V D Drain Voltage (VD) 40 V Drain Quiescent Current (IDQ) 50 mA Gate Voltage Range (VG) -10 to 0 V (1) Drain Current Under RF Drive ( I ) 820 mA D Drain Current (ID) 1.5 A Pinch-off Gate Voltage (VG) 3.5 V (Typ.) Gate Current (I ) -2.52 to 4.2mA G Channel Temperature (TCH) 225C (Max.) Power Dissipation (P ) 17 W D (1) 10% pulses at 3GHz, Power Tuned CW Input Power (P ) 10GHz 34 dBm IN Channel Temperature (T ) 275C CH Mounting Temperature (30 Sec.) 320C Storage Temperature 65 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Datasheet: Rev A 10-22-14 Disclaimer: Subject to change without notice - 2 of 21 - 2014 TriQuint www.triquint.com

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Qorvo may also be referenced as

Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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