TGA4548-SM 17 20 GHz 10 W GaN Power Amplifier Product Overview Qorvos TGA4548-SM is a high frequency, high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA4548-SM operates from 17 20 GHz and typically provides > 10 W saturated output power with power-added efficiency of 25% and large-signal gain of 18 dB. This combination of high frequency performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA4548-SM also has an integrated power detector to support system diagnostics and other needs. 24-Lead 5.0x5.5x1.7mm Air Cavity Laminate Package The TGA4548-SM is offered in a small 5x5.5 mm surface mount package, matched to 50 and has integrated DC Key Features blocking capacitors on both RF ports allowing for simple system integration. The frequency coverage and Frequency Range:17 20 GHz operational flexibility allows it support satellite P (P =22 dBm): 40 dBm communication as well as point to point data links. SAT IN PAE (P =22 dBm): 25 % IN The TGA4548-SM is 100% DC and RF tested to ensure Small Signal Gain: 30 dB compliance to electrical specifications. Integrated Power Detector Lead-free and RoHS compliant. Bias: V = V = V =+28V, I + I + I = 300mA D1 D2 D3 D1 D2 D3 Package Dimensions: 5.0 x 5.5 x 1.7 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Point-to-Point Radio Satellite Communications Ordering Information Part No. Description TGA4548-SM K-band 10W GaN PA TGA4548-SMTR7 200 pieces on a 7 reel (standard) TGA4548-SMEVB Evaluation Board Data Sheet Rev. E, May 27, 2020 1 of 17 www.qorvo.com TGA4548-SM 17 20 GHz 10 W GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter Min Typ Max Units Drain Voltage (VD) 29.5 V Drain Voltage (V ) +28 V D Gate Voltage Range (V ) -8 to 0 V G Drain Current, Quiescent (IDQ) 300 mA Drain Current Stage 1 (I ), Top or Bottom 500 mA D1 Drain Current, RF (ID Drive) See chart page 5 mA Drain Current Stage 2 (I ), Top or Bottom 500 mA D2 Gate Voltage Typ. Range (V ) 2.1 to -2.8 V Drain Current Stage 3 (ID3), Top and Bottom 2 A G Gate Current (IG), See chart Gate Current, RF (IG Drive) See chart page 5 mA RF Input Power, CW, 50, T=25C 26 dBm Operating Temp. Range 40 +25 +85 C Dissipated Power (PDISS), CW, 85C 45 W Electrical specifications are measured at specified test conditions. Reference Diode Current (I ) 4 mA ref Specifications are not guaranteed over all recommended operating conditions. Detector Diode Current (I ) 4 mA det Storage Temperature 55 to +150C Gate Current Maximum vs. T vs. Stage CH Mounting Temperature (30 seconds) 260C 100 Total Exceeding any one or a combination of the Absolute Maximum Rating 90 conditions may cause permanent damage to the device. Extended Stage 3 80 application of Absolute Maximum Rating conditions to the device may Stage 2 reduce device reliability. 70 Stage 1 60 50 40 30 20 10 0 110 120 130 140 150 160 170 180 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ. Max Units Operational Frequency Range Unless Otherwise 17 20 GHz Output Power at Saturation, PSAT PIN = +22 dBm 39 40 dBm Power Added Efficiency, PAE PIN = +22 dBm 25 % Frequency = 17.7, 18.7 GHz 23.5 30 Small Signal Gain, S21 dB Frequency = 19.7 GHz 21 29 Input Return Loss, IRL 10 dB Output Return Loss, ORL 7 dB Third Order Intermodulation, IM3 P = +34 dBm/tone 25 dBc OUT S21 Temperature Coefficient Tdiff = (85 (40)) C 0.06 dB/C PSAT Temperature Coefficient Tdiff = (85 (40)) C, Pin = +23 dBm 0.02 dBm/C Gate Leakage VD = +10 V, VG = -3.7 V -6.5 -1.5 0.1 mA Notes: 1. Test conditions unless otherwise noted: CW, V = V = V = 28V, I + I + I = 300mA, adjusting V = V = V , T =+25C, Z =50 D1 D2 D3 D1 D2 D3 G1 G2 G3 BASE 0 2. T is back side of package BASE Data Sheet Rev. E, May 27, 2020 2 of 17 www.qorvo.com I Maximum (mA) G