TGA2817-SM S-Band 60 W GaN Power Amplifier General Description Qorvos TGA2817-SM is a high-power, S-band amplifier TGA2817 fabricated on Qorvos TQGaN25 0.25 um GaN on SiC YYWW production process. Covering 2.9-3.5 GHz, the TGA2817- MXXX SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency. The TGA2817-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The TGA2817-SM is matched to 50 ohms with integrated DC Product Features blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems. Frequency Range: 2.93.5 GHz P : > 48 dBm (at P = 24 dBm) OUT IN Lead-free and RoHS compliant Large Signal Gain: > 24 dB (at P = 24 dBm) IN PAE: > 54 % (at P = 24 dBm) IN Bias: V = 28 V, I = 200 mA D DQ Package Dimensions: 7.00 x 7.00 x 0.85 mm Functional Block Diagram Applications Military Radar 1 36 Commercial Radar 2 35 3 34 4 33 5 32 RF IN 6 31 RF OUT RF IN 7 30 RF OUT 8 29 9 28 10 27 11 26 12 25 Ordering Information Part Description TGA2817-SM S-Band 60 W GaN Power Amplifier TGA2817-SM EVB TGA2817-SM Evaluation Board Data Sheet Rev B, October 2019 Subject to change without notice 1 of 13 www.qorvo.com 13 48 14 47 15 46 16 45 17 44 18 43 19 42 20 41 21 40 22 39 23 38 24 37 TGA2817-SM S-Band 60 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Drain Current (ID1/ID2) 1.4 / 5.8 A Drain Current (quiescent, IDQ) 200 mA Gate Current (IG) See graph, page 8 Drain Current (under drive ,ID DRIVE) 4.6 A Dissipated Power (PDISS) 92 W Gate Voltage Range (VG) 2.8 to 2.0 V (1) Input Power: 50 , 85 C 30 dBm Operating Temperature 40 to 85 C (1) Input Power: 3:1 VSWR, 85 C 28 dBm Electrical specifications are measured at specified test Soldering Temperature 260 C conditions. Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 55 to 150 C Notes: 1. Based on die performance. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions, unless otherwise noted: 25 C, V = 28 V, I = 200 mA, Pulse Width = 100 us, Duty Cycle = 10% D DQ Parameter Condition Min Typical Max Units Operational Frequency 2.9 3.5 GHz Output Power (PIN = 24 dBm) 2.9 GHz 47.2 48 dBm 3.1 GHz 47.2 48 dBm 3.3 GHz 47.4 48 dBm Power Added Efficiency (PIN = 24 dBm) 2.9 GHz 49.5 54 % 3.1 GHz 48.0 54 % 3.3 GHz 47.0 54 % Large Signal Gain (P = 24 dBm) 24 dB IN Input Return Loss >8 dB Gate Leakage (VD = 10 V, VG = 3.7 V) 30.6 0.46 0.0001 mA Output Power Temperature Coefficient 0.006 dBm/C Data Sheet Rev B, October 2019 Subject to change without notice 2 of 13 www.qorvo.com