SGA4463ZDC to 3500MHz, Cascadable SiGe HBT MMIC Ampli- fier SGA4463Z DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA4463Z is a high performance SiGe HBT MMIC Amplifier. A Darling- High Gain: 17dB at 1950MHz ton configuration featuring one-micron emitters provides high F and T Cascadable 50 excellent thermal performance. The heterojunction increases breakdown Operates from Single Supply voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodu- Low Thermal Resistance lation products. Only two DC-blocking capacitors, a bias resistor, and an Package optional RF choke are required for operation. Applications Optimum Technology PA Driver Amplifier Matching Applied GaAs HBT Gain & Return Loss vs. Frequency Cellular, PCS, GSM, UMTS V = 3.2 V, I = 45 mA (Typ.) GaAs MESFET D D 24 0 IF Amplifier InGaP HBT GAIN Wireless Data, Satellite SiGe BiCMOS 18 -10 Si BiCMOS ORL SiGe HBT 12 -20 GaAs pHEMT IRL Si CMOS 6 -30 Si BJT 0 -40 GaN HEMT 01 23 45 6 InP HBT Frequency (GHz) RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 17.5 19.0 21.0 dB 850MHz 17.0 dB 1950MHz 16.0 dB 2400MHz Output Power at 1dB Compression 14.0 dBm 850MHz 12.3 dBm 1950MHz Output Third Intercept Point 27.0 dBm 850MHz 24.8 dBm 1950MHz Bandwidth Determined by Return 3500 MHz >9dB Loss Input Return Loss 24.4 dB 1950MHz Output Return Loss 12.8 dB 1950MHz Noise Figure 2.8 dB 1950MHz Device Operating Voltage 2.9 3.2 3.5 V Device Operating Current 41 45 49 mA Thermal Resistance 255 C/W (Junction - Lead) Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, R =110 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111011 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6 Gain (dB) Return Loss (dB)SGA4463Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (I)90 mA cause permanent damage to the device. Extended application of Absolute Maximum D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Max Device Voltage (V)5 V D tions is not implied. Max RF Input Power +18 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max Junction Temp (T)+150 C J infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. Max Storage Temp +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Operation of this device beyond any one of these limits may cause permanent dam- materials and red phosphorus as a flame retardant, and <2% antimony in age. For reliable continuous operation, the device voltage and current must not solder. exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l D D J L TH Typical Performance at Key Operating Frequencies Parameter Unit 100 500 850 1950 2400 3500 MHz MHz MHz MHz MHz MHz Small Signal Gain dB 20.2 19.8 19.0 17.0 16.0 13.7 Output Third Order Intercept Point dBm 27.8 27.0 24.8 Output Power at 1dB Compression dBm 14.0 14.0 12.3 Input Return Loss dB 22.5 19.5 19.9 24.4 21.1 16.5 Output Return Loss dB 22.8 21.7 18.4 12.8 11.9 10.5 Reverse Isolation dB 23.4 22.8 23.0 22.2 21.7 19.8 Noise Figure dB 2.6 2.5 2.8 Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, R =110 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L OIP vs. Frequency P vs. Frequency 3 1dB V =3.2 V, I = 45 mA (Typ.) V = 3.2 V, I = 45 mA (Typ.) D D D D 35 18 T L 30 15 25 12 20 9 T =+25C L T =+25C L 15 6 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Frequency (GHz) Noise Figure vs. Frequency V = 3.2 V, I = 45 mA (Typ.) D D 5 4 T =+25C L 3 2 1 T =+25C L 0 0 0.5 11.5 22.5 3 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS111011 OIP3 (dBm) Noise Figure (dB) P1dB (dBm)