Product Information

RF2878SR

RF2878SR electronic component of Qorvo

Datasheet
RF Amplifier 150-2500MHz 2.5-5V

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

RF2878SR
Qorvo

1 : USD 3.024
10 : USD 2.7328
25 : USD 2.4401
N/A

Obsolete
0 - Global Stock

MOQ : 100
Multiples : 100

Stock Image

RF2878SR
Qorvo

100 : USD 2.2756
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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RF2878 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point RF IN 1 5GND2 Adjustable Bias Current Power Down Control Single 2.5V to 5.0V Power GND1 2 Supply 150MHz to 2500MHz Opera- tion VPD 3 4RF OUT Applications CDMA/FM Cellular PCS LNA Functional Block Diagram Low Noise Transmit Driver Amplifier Product Description General Purpose Amplifica- The RF2878 is a low noise amplifier with a very high dynamic range designed for tion digital cellular applications. The device functions as an outstanding front end low Commercial and Consumer noise amplifier or power amplifier driver amplifier in the transmit chain of digital Systems subscriber units where low transmit noise power is a concern. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 5-lead plastic package. Ordering Information RF2878 Sample bag with 25 pieces RF2878SR 7 Sample reel with 100 pieces RF2878TR7 7 Reel with 2500 pieces RF2878PCK-410 1800MHz to 2170MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111104 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 14RF2878 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage, V <5V Exceeding any one or a combination of the Absolute Maximum Rating conditions may CC cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Power Down Voltage, V <3V PD mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Input RF Level +10 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Operating Ambient Temperature -40 to +85 C The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Storage Temperature -40 to +150 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Junction Temperature 150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. I 30 mA CC Specification Parameter Unit Condition Min. Typ. Max. Overall RF Frequency Range 150 2500 MHz Schematic per LNA Application Low Noise Amplifier T=25C, RF=881MHz, V =2.8V, PD 881MHz Performance R1=1k Gain 20 dB V =3.0V, I =7.6mA CC CC 20 dB V =2.7V, I =7.5mA CC CC Noise Figure 1.4 1.6 dB V =3.0V, I =7.6mA CC CC 1.4 1.6 dB V =2.7V, I =7.5mA CC CC Input IP3 +6.0 dBm V =3.0V, I =7.6mA CC CC +5.5 dBm V =2.7V, I =7.5mA CC CC Low Noise Amplifier Schematic per LNA Application =2.8V, R1=1k T=25C, RF=1950MHz, V PD 1950MHz Performance Gain 13 dB V =3.0V, I =6.4mA CC CC 13 dB V =2.7V, I =6.3mA CC CC Noise Figure 1.3 1.5 dB V =3.0V, I =6.4mA CC CC 1.3 1.5 dB V =2.7V, I =6.3mA CC CC Input IP3 +16.5 dBm V =3.0V, I =6.4mA CC CC +16.0 dBm V =2.7V, I =6.3mA CC CC Schematic per Driver Amplifier Application Driver Amplifier T=25C, RF=836MHz, V =2.8V PD 836MHz Performance Gain 19.5 20.5 21.5 dB V =3.5V CC 19.5 20.5 21.5 dB V =3.0V CC 19.5 20.5 21.5 dB V =2.7V CC Output IP3 25 +32.0 35 dBm V =3.5V CC +29.0 dBm V =3.0V CC +27.8 dBm V =2.7V CC Noise Figure 1.9 2.0 dB V =3.5V CC 1.85 2.0 dB V =3.0V CC 1.8 2.0 dB V =2.7V CC Reverse Isolation 25 dB V =3.5V CC 25 dB V =3.0V CC 25 dB V =2.7V CC 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 14 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS111104

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
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TriQuint Semiconductor, Inc

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