X-On Electronics has gained recognition as a prominent supplier of QPA2609D rf amplifier across the USA, India, Europe, Australia, and various other global locations. QPA2609D rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

QPA2609D

QPA2609D electronic component of Qorvo
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Part No.QPA2609D
Manufacturer: Qorvo
Category:RF Amplifier
Description: RF Amplifier 7-14GHz LNA DIE
Datasheet: QPA2609D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 50
Multiples : 50
50 : USD 63.749
100 : USD 50.1816
250 : USD 48.3631
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RoHS - XON
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Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Brand
Number Of Channels
Development Kit
Input Return Loss
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We proudly offer the QPA2609D RF Amplifier at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the QPA2609D RF Amplifier.

QPA2609D 7 14 GHz Low Noise Amplifier Product Overview Qorvos QPA2609D is a high-performance, low noise MMIC amplifier fabricated on Qorvos production 90 nm pHEMT process (QPHT09). Covering 7 14 GHz, the QPA2609D provides 27 dB small signal gain and 1.1 dB noise figure. With a compact size of 2.37 x 0.97 mm, the amplifier can deliver 20dBm of saturated power with P1dB of 18 dBm. In addition, the device can provide low IMD3 level of 50 dBc at Pout = 0 dBm/tone. The QPA2609D is matched to 50 ohms with integrated DC blocking caps on both I/O ports for easy handling and simple system integration. The high performance of the QPA2609D makes it ideal for satellite and point to point communication systems. Functional Block Diagram Key Features Frequency Range: 7 14 GHz Noise Figure: 1.1 dB (typical) Small Signal Gain: 27 dB (typical) P1dB: 18 dBm (typical) IMD3: 50 dBc (typical) (Pout=0 dBm/tone) Bias: VD = 3.5 V, IDQ = 120 mA, VG = 0.46 V (typical) Die Dimensions: 2.37 x 0.97 x 0.10 mm Ordering Information Part No. Description Applications QPA2609D 7 14 GHz Low Noise Amplifier Satellite Communications QPA2609S Space Inspected Version, Contact Sales Point-to-Point Communications QPA2609DEVB1 QPA2609D Evaluation Board Radar Data Sheet Rev. C, Feb 2021 Subject to change without notice 1 of 16 www.qorvo.com QPA2609D 7 14 GHz Low Noise Amplifier Absolute Maximum Ratings Parameter Rating Units Drain Voltage (VD) 4.5 V Drain Current (I /I /I ) 96/115/192 mA D1 D2 D3 Gate Voltage Range (VG) 1.3 to 0 V Gate Current (IG1/IG2/IG3 at 125 C) 5.0/5.0/6.6 mA RF Input Power (50 , 85 C) 20 dBm Channel Temperature, TCH 175 C Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Value Units Drain Voltage 3.5 V Drain Current (quiescent, IDQ) 120 mA Drain Current (ID, Low noise / PSAT) 120 / 175 mA Gate Voltage (typical) 0.46 V Operating Temperature Range 40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VD = +3.5V, IDQ = 120 mA, Temp. = +25C. Data de-embedded to MMIC bond wires. Parameter Min Typ Max Units Operating Frequency 7 14 GHz Small Signal Gain 27 dB Noise Figure 1.1 dB 1-dB Compression Point 18 dBm Input Return Loss 14.0 dB Output Return Loss 13.0 dB RD 3 Order Intermodulation Level (P = 0 dBm / Tone) 50 dBc OUT Output TOI (Pout = 0 dBm / tone) 25.0 dBm Gain (S21) Temperature Coefficient 0.013 dB/C Data Sheet Rev. C, Feb 2021 Subject to change without notice 2 of 16 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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