Product Information

QPA1003D

QPA1003D electronic component of Qorvo

Datasheet
RF Amplifier 1-8GHz 10 Watt GaN

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 10
Multiples : 10

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QPA1003D
Qorvo

10 : USD 354.0625
30 : USD 305.8125
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Cnhts
Hts Code
Input Return Loss
Mxhts
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QPA1003D 1 8GHz 10W GaN Power Amplifier Product Description Qorvos QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50 with integrated DC Product Features blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally Frequency Range: 18GHz suited in support of test instrumentation and electronic POUT: 40dBm PIN = 15dBm warfare, as well as, supporting multiple radar and PAE: 30% P = 15dBm IN communication bands. Large Signal Gain: 25 dB PIN = 15dBm The QPA1003D is 100% DC and RF tested on-wafer to Small Signal Gain: 30 dB ensure compliance to electrical specifications. Bias: VD = +28V, IDQ = 650mA Chip Dimensions: 3.3 x 3.55 x 0.10mm Lead-free and RoHS compliant. Process Technology: QGaN15 Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Electronic Warfare (EW) 2 3 Radar Communications Test Instrumentation 1 4 Ordering Information Part No. Description QPA1003D 18GHz 10W GaN Power Amplifier QPA1003DPCB4B01 Evaluation Board - 1 of 21 - Data Sheet Rev. E, December 2020 www.qorvo.com QPA1003D 1 8GHz 10W GaN Power Amplifier Electrical Specifications Test conditions unless otherwise noted: 25C, VD = +28V, IDQ = 650mA CW Parameter Min Typ Max Units Operational Frequency Range 1 8 GHz Frequency = 1 GHz 39.4 Output Power PIN = 15dBm Frequency = 4 GHz 40.6 dBm Frequency = 8 GHz 40 Frequency = 1 GHz 46.8 Power Added Efficiency Frequency = 4 GHz 34.4 % PIN = 15dBm Frequency = 8 GHz 30.4 Frequency = 1 GHz 31.5 Small Signal Gain Frequency = 4 GHz 32.6 dB Frequency = 8 GHz 31 Frequency = 1 GHz 13.2 Input Return Loss Frequency = 4 GHz 14.7 dB Frequency = 8 GHz 14.4 Frequency = 1 GHz 16.7 Output Return Loss dB Frequency = 4 GHz 11 Frequency = 8 GHz 21 Small Signal Gain Temperature Coefficient 0.04 dB/C Output Power Temperature Coefficient 0.012 dBm/C Recommended Operating Conditions ConditioConditions Parameter Value/Range Drain Voltage (VD) +28V Drain Current (I ) 650mA DQ Gate Voltage Range (VG) 2.8 to 2.0V Temperature (T ) 40 to 85C BASE Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. - 2 of 21 - Data Sheet Rev. E, December 2020 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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