Product Information

PE4250MLI-Z

PE4250MLI-Z electronic component of pSemi

Datasheet
RF Switch SPDT 10MHz to 3GHz 35dB 8-Pin MSOP T/R

Manufacturer: pSemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 1.05 ea
Line Total: USD 2100

1940 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
4152 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.449
100 : USD 1.2995
1000 : USD 1.1063
2000 : USD 1.1063
4000 : USD 1.0798
10000 : USD 1.0281
50000 : USD 1.027

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Switches
Frequency
Insertion Loss
Packaging
Packaging
Brand
Pin Count
Switching Speed
Isolation Voltage
Package Type
Operating Supply Voltage
Rad Hardened
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Product Specification PE4250 SPDT UltraCMOS RF Switch Product Description 10 3000 MHz, Reflective The PE4250 is a HaRP-enhanced Reflective SPDT (single Features pole double throw) RF Switch for use in general switching HaRP-Technology Enhanced applications and mobile infrastructure. This device offers a Low Insertion Loss: 0.65 dB 1000 MHz flexible supply voltage of 3.3/5V, single-pin or complementary pin control inputs, and 4000 V ESD tolerance. It presents a High Isolation: 51 dB 1000 MHz simple alternative solution to pin diode and mechanical relay switches. P1dB typical: +30.5 dBm IIP3 typical: +59 dBm Peregrines HaRP technology enhancements deliver high linearity and exceptional performance. It is an innovative Fast switching time: 150 ns feature of the UltraCMOS process, providing performance Flexible supply voltage: 3.3 V 10% or 5.0 superior to GaAs with the economy and integration of V 10% supply (see table 3) conventional CMOS. Excellent ESD protection: 4000 V HBM No blocking capacitors required Single pin or complementary control inputs Figure 1. Functional Diagram RFC Figure 2. Package Type 8-lead MSOP RF1 RF2 ESD ESD CMOS Control Driver V1 V2 Table 1. Target Electrical Specifications Temp = 25C, V = 3.3 or 5.0 V DD Parameter Conditions Min Typical Max Units 1 Operation Frequency 10 3000 MHz 10 MHz 0.6 0.65 dB 1000 MHz 0.65 0.70 dB Insertion Loss (RF1/RF2) 2000 MHz 0.75 0.80 dB 3000 MHz 0.75 0.90 dB 1000 MHz 50 51 dB Isolation (RFC to RF1/RF2) 2000 MHz 46 48 dB 3000 MHz 35 40 dB 1000 MHz 25 dB Return Loss 2000 MHz 23 dB 3000 MHz 20 dB 2 Input 1 dB Compression 50 - 3000 MHz 30.5 dBm Input IP3 50 - 3000 MHz, +18 dBm per tone, 5 MHz spacing 59 dBm Switching Time 50% CTRL to 10/90% RF 150 300 ns Notes: 1. Device linearity will begin to degrade below 10 MHz. 2. Note Absolute Maximum rating of P = 27 dBm. IN Document No. 70-0254-02 www.psemi.com 2008-2009 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 9 Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: 4250 PE4250 Product Specification Figure 3. Pin Configuration (Top View) Table 4. Absolute Maximum Ratings Symbol Parameter/Conditions Min Max Units 1 8 V2 RF2 V Power supply voltage 3 5.5 V DD Voltage on any control input -0.3 5.5 V V I 2 7 V1 GND T Storage temperature range -65 150 C ST 3 6 RFC GND P RF Input power (50 ) 27 dBm IN 5 ESD voltage (HBM) 4000 4 5 V V ESD N/C or RF1 ESD voltage (Machine Model) 250 GND Note: 5. Human Body Model (HBM, MIL STD 883 Method 3015.7) Table 2. Pin Descriptions Exceeding absolute maximum ratings may cause permanent damage. Operation should be Pin Pin Name Description No. restricted to the limits in the Operating Ranges table. Operation between operating range This pin supports two interface options: Single-pin control mode. A nominal 3-volt maximum and absolute maximum for extended or 5-volt supply connection is required. periods may reduce reliability. 1 V2 Complementary-pin control mode. A complementary CMOS control signal to V1 is supplied to this pin. 2 V1 Switch control input, CMOS logic level. Latch-Up Avoidance 3 3 RFC RF Common port. Unlike conventional CMOS devices, UltraCMOS 4 N/C or GND No Connect or Ground devices are immune to latch-up. 3 3 5 RF1 RF1 port. Ground Connection. Traces should be Electrostatic Discharge (ESD) Precautions 6 GND physically short and connected to ground plane for best performance. When handling this UltraCMOS device, observe Ground Connection. Traces should be the same precautions that you would use with 7 GND physically short and connected to ground plane for best performance. other ESD-sensitive devices. Although this device 3 3 8 RF2 RF2 port. contains circuitry to protect it from damage due to Note 3. All RF pins must be DC blocked with an external ESD, precautions should be taken to avoid series capacitor or held at 0 V . DC exceeding the specified rating. Switching Frequency Table 3. Operating Ranges Parameter Min Typ Max Units The PE4250 has a maximum 25 kHz switching rate. 3.0 3.3 3.6 V 4 V Power Supply Voltage DD 4.5 5.0 5.5 V Moisture Sensitivity Level I Power Supply Current The Moisture Sensitivity Level rating for the PE4250 DD V = V = 3.3V 55 60 A DD CNTL in the 8-lead MSOP package is MSL1. V = V = 5.0V 75 80 A DD CNTL Control Voltage High 0.8 x V V DD Control Voltage Low 0.2 x V V DD P RF Input Power (50 ) 27 dBm IN T Operating temperature OP -40 25 85 C range T Storage temperature range -65 25 150 C ST Note 4. Customer must choose either 3.3 V or 5.0 V power supply range 2008-2009 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0254-02 UltraCMOS RFIC Solutions Page 2 of 9 Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Peregrine
PEREGRINE SEMICONDUCTOR

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