PE4140B-Z

Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable Ultimate Quad MOSFET array of operation beyond 6.0 GHz. This quad array operates with Ultra-high linearity, broadband differential signals at all ports (RF, LO, IF), allowing mixers to performance beyond 6.0 GHz be built that use LO powers from -7 dBm to +20 dBm. Typical applications range from frequency up/down-conversion to Ideal for mixer applications phase detection for Cellular/PCS Base Stations, Wireless Up/down conversion Broadband Communications and STB/Cable modems. Low conversion loss The PE4140 is manufactured on pSemis UltraCMOS process, a patented variation of silicon-on-insulator (SOI) High LO Isolation technology on a sapphire substrate, offering the performance Packaged in small 6-lead 3x3 mm DFN of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram Figure 2. Package Type 6-lead DFN Table 1. AC and DC Electrical Specifications +25 C Symbol Characteristics Test Conditions Min Typ Max Units 1 F Operating Frequency Range DC 6.0 GHz TYP V Drain-Source Voltage V = +3V, I = 40 mA 260 320 380 mV DS GS DS V Match Drain-Source Voltage Match 12 40 mV DS V Threshold Voltage V = 0.1V per ASTM F617-00 -100 mV T DS R Drain-Source ON Resistance V = +3V, I = 40 mA 6.5 7.75 9.5 DS GS DS Note 1: Typical untested operating frequency range of Quad MOSFET transistors. Document No. DOC-87599-3 www.psemi.com 2018-2020 pSemi Corp. All rights reserved. Page 1 of 10 PE4140 Product Specification Figure 3. Pin Configuration (Top View) Electrostatic Discharge (ESD) Precautions This MOSFET device has minimally protected inputs and is highly susceptible to ESD damage. When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Device Description The PE4140 passive broadband Quad MOSFET Table 2. Pin Descriptions array is designed for use in up-conversion and Pin Pin down-conversion applications for high Description No. Name performance systems such as cellular 1 IF1 IF Output Connection (Drain) infrastructure equipment and STB/CATV systems. 2 RF1 RF Input Connection (Source) The PE4140 is an ideal mixer core for a wide 3 RF2 RF Input Connection (Source) range of mixer products, including module level 4 LO2 LO Input Connection (Gate) solutions that incorporate baluns or other single- ended matching structures enabling three-port 5 LO1 LO Input Connection (Gate) operation. 6 IF2 IF Output Connection (Drain) The performance level of this passive mixer is made possible by the very high linearity afforded Table 3. Absolute Maximum Ratings by pSemis UltraCMOS process. Parameters/ Symbol Min Max Units Conditions Marking Storage temperature T -65 150 C ST Packaged devices are marked with part number range 4140, date code and lot code. Operating temperature T -40 85 C OP range Moisture Sensitivity Level Maximum DC plus peak V AC voltage across Drain- 3.3 V DC + AC The Moisture Sensitivity Level rating for the Source PE4140 in the 6-lead 3x3 DFN package is MSL1. Maximum DC plus peak V AC voltage across Gate- 4.2 V DC+AC Drain or Gate-Source 1 V HBM ESD Voltage 100 V ESD Note 1: ML STD 883 Method 3015.7 Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. 2018-2020 pSemi Corp. All rights reserved. Document No. DOC-87599-3 UltraCMOS RFIC Solutions Page 2 of 10