EK42520-02

ESD Product Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz13 GHz Product Description Features The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless HaRP technology enhanced applications. This broadband general purpose switch Fast settling time maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible No gate and phase lag upgraded version of PE42552 with higher power No drift in insertion loss and phase handling of 36 dBm continuous wave (CW) and 38 dBm High power handling 8 GHz in 50 instantaneous power in 50 8 GHz. The PE42520 exhibits high isolation, fast settling time, and is offered in 36 dBm CW a 3 3 mm QFN package. 38 dBm instantaneous power 26 dBm terminated port The PE42520 is manufactured on pSemis UltraCMOS process, a patented variation of silicon-on-insulator (SOI) High linearity technology on a sapphire substrate, offering the 66 dBm IIP3 performance of GaAs with the economy and integration Low insertion loss of conventional CMOS. 0.8 dB 3 GHz 0.9 dB 10 GHz 2.0 dB 13 GHz Figure 1. Functional Diagram High isolation RFC 45 dB 3 GHz 31 dB 10 GHz 18 dB 13 GHz ESD performance RF1 RF2 4 kV HBM on RF pins to GND ESD ESD 2.5 kV HBM on all pins 1 kV CDM on all pins 50 50 CMOS Control Driver and ESD Figure 2. Package Type 16-lead 3 3 mm QFN DOC-50572 LS CTRL Vss EXT Document No. DOC-73010-2 www.psemi.com 2015, 2018 pSemi Corp. All rights reserved. Page 1 of 16 PE42520 Product Specification Table 1. Electrical Specifications +25 C, V = 3.3V, V = 0V or V = 3.4V, V = 3.4V, DD SS EXT DD SS EXT (Z = Z = 50), unless otherwise noted S L Parameter Path Condition Min Typ Max Unit As Operation frequency 9 kHz 13 GHz shown 9 kHz10 MHz 0.60 0.80 dB 10 MHz3 GHz 0.80 1.00 dB 3 GHz7.5 GHz 0.85 1.05 dB Insertion loss RFCRFX 7.5 GHz10 GHz 0.90 1.10 dB 10 GHz12 GHz 1.20 1.65 dB 12 GHz13 GHz 2.00 2.70 dB 9 kHz10 MHz 70 90 dB 10 MHz3 GHz 46 54 dB 3 GHz7.5 GHz 35 38 dB Isolation RFXRFX 7.5 GHz10 GHz 24 27 dB 10 GHz12 GHz 16 19 dB 12 GHz13 GHz 13 17 dB 9 kHz10 MHz 80 90 dB 10 MHz3 GHz 42 45 dB 3 GHz7.5 GHz 41 44 dB Isolation RFCRFX 7.5 GHz10 GHz 26 31 dB 10 GHz12 GHz 16 20 dB 12 GHz13 GHz 13 18 dB 9 kHz10 MHz 23 dB 10 MHz3 GHz 17 dB 3 GHz7.5 GHz 15 dB Return loss (active port) RFCRFX 7.5 GHz10 GHz 18 dB 10 GHz12 GHz 20 dB 12 GHz13 GHz 10 dB 9 kHz10 MHz 23 dB 10 MHz3 GHz 17 dB 3 GHz7.5 GHz 15 dB Return loss (common port) RFCRFX 7.5 GHz10 GHz 18 dB 10 GHz12 GHz 18 dB 12 GHz13 GHz 10 dB 9 kHz10 MHz 32 dB 10 MHz3 GHz 24 dB 3 GHz7.5 GHz 21 dB Return loss (terminated port) RFX 7.5 GHz10 GHz 13 dB 10 GHz12 GHz 8 dB 12 GHz13 GHz 5 dB 1 Input 0.1dB compression point RFCRFX 10 MHz13 GHz Fig. 5 dBm Input IP2 RFCRFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFCRFX 834 MHz, 1950 MHz, and 2700 MHz 66 dBm Settling time 50% CTRL to 0.05 dB final value 15 20 s Switching time 50% CTRL to 90% or 10% of final value 5.5 9.5 s Note 1: The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power P (50) IN 2015, 2018 pSemi Corp. All rights reserved. Document No. DOC-73010-2 UltraCMOS RFIC Solutions Page 2 of 16