Product Information

PJM2319PSA

PJM2319PSA electronic component of Pingjingsemi

Datasheet
MOSFET P Trench 40V 3.1A 3V @ 250uA 80 mΩ @ 3.1A,10V SOT-23 RoHS
Manufacturer: Pingjingsemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0786 ea
Line Total: USD 0.79

30215 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
29 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10

Stock Image

PJM2319PSA
Pingjingsemi

10 : USD 0.077
100 : USD 0.0629
300 : USD 0.0559
3000 : USD 0.0482
6000 : USD 0.044
9000 : USD 0.0419

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

This electronic part is a MOSFET-based N-Channel Enhancement Mode SOT23 FET from Pingjingsemi. It features an ultra-low on-resistance of 80 mO at a drain current of 3.1A, a maximum drain source voltage of 40V, and a gate threshold voltage of 3V. It is capable of handling a maximum source current of 250µA and and a maximum drain current of 3.1A in a 10V Drain Source voltage. The package is compliant to the RoHS directive and is designed to save space and reduce power dissipation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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