Product Information

500-00001

500-00001 electronic component of Parallax

Datasheet
Transistors Bipolar - BJT 2N3904 Transistor
Manufacturer: Parallax
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4462 ea
Line Total: USD 0.45

2037 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2037 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

500-00001
Parallax

1 : USD 0.3209
5 : USD 0.3105
10 : USD 0.299
25 : USD 0.299
50 : USD 0.2979

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS DC Current Gain (Note 2) h FE (I = 0.1 mAdc, V = 1.0 Vdc) 2N3903 20 C CE 2N3904 40 (I = 1.0 mAdc, V = 1.0 Vdc) 2N3903 35 C CE 2N3904 70 (I = 10 mAdc, V = 1.0 Vdc) 2N3903 50 150 C CE 2N3904 100 300 (I = 50 mAdc, V = 1.0 Vdc) 2N3903 30 C CE 2N3904 60 (I = 100 mAdc, V = 1.0 Vdc) 2N3903 15 C CE 2N3904 30 CollectorEmitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc 0.3 C B BaseEmitter Saturation Voltage (Note 2) V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N3903 250 C CE 2N3904 300 Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF EB C ibo Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0 C CE 2N3904 1.0 10 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0 C CE 2N3904 0.5 8.0 SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 50 200 C CE 2N3904 100 400 Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 40 mhos C CE oe Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 2N3903 6.0 C CE S 2N3904 5.0 SWITCHING CHARACTERISTICS Delay Time t 35 ns d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 ns r Storage Time (V = 3.0 Vdc, I = 10 mAdc, 2N3903 t 175 ns CC C s I = I = 1.0 mAdc) 2N3904 200 B1 B2 Fall Time t 50 ns f 2. Pulse Test: Pulse Width 300 s Duty Cycle 2%.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Parallax may also be referenced as

Parallax Inc
Parallax Inc.

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