Product Information

SFH4244-QR

SFH4244-QR electronic component of OSRAM

Datasheet
LED 35mW 950nm IrLED 2-Pin SMD T/R

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.2634 ea
Line Total: USD 526.8

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.255

     
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2016-08-11 High Power Infrared Emitter (940 nm) Version 1.4 SFH 4244 Features: High Power Infrared LED Short switching time The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras IR data transmission Sensor technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I = 70 mA, t = 20 ms F p SFH 4244 11 ( 4) Q65110A7516 SFH 4244-QR 6.3 ... 20 Q65110A8753 Note: Measured at a solid angle of = 0.01 sr 2016-08-11 1Version 1.4 SFH 4244 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 70 mA F Surge current I 0.7 A FSM (t = 100 s, D = 0) p Power consumption P 140 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 500 K / W thJA Thermal resistance junction - soldering point R 280 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 950 nm peak (I = 70 mA, t = 20 ms) F p Centroid wavelength (typ) 940 nm centroid (I = 70 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 42 nm max (I = 70 mA, t = 20 ms) F p Half angle (typ) 60 Dimensions of active chip area (typ) L x W 0.2 x 0.2 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 70 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.6 ( 2) V F (I = 70 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.4 ( 3) V F (I = 500 mA, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 35 mW e (I =70 mA, t =20 ms) F p 2016-08-11 2

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