Product Information

Q65110-A2634

Q65110-A2634 electronic component of OSRAM

Datasheet
Ambient Light Sensor Phototransistor Chip Silicon 850nm 3-Pin DIL SMT

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 1.134 ea
Line Total: USD 2268

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 2000
Multiples : 2000
2000 : USD 1.134

     
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2008-07-30 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 3400 Features: Besondere Merkmale: Spectral range of sensitivity: 460 ... 1080 nm Spektraler Bereich der Fotoempfindlichkeit: 460 ... 1080 nm Package: Smart DIL Gehuse: Smart DIL Special: High linearity Besonderheit: Hohe Linearitt Available only on tape and reel Nur gegurtet lieferbar Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln Ambient light detector Umgebungslichtsensor Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 0.1 mW/cm , V = 5 V e CE I A PCE SFH 3400 63 ... 320 Q65110A2629 SFH 3400-2/3 100 ... 320 Q65110A2634 2008-07-30 1Version 1.0 SFH 3400 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 20 V CE Kollektor-Emitter-Spannung Collector-emitter voltage V 70 V CE Kollektor-Emitter-Spannung (t < 2 min) Collector current I 50 mA C Kollektorstrom Collector surge current I 100 mA CS Kollektorspitzenstrom ( < 10 s) Emitter-collector voltage V 7V EC Emitter-Kollektor-Spannung Total power dissipation P 120 mW tot Verlustleistung Thermal resistance for mounting on pcb R 450 K/W thJA Wrmewiderstand fr Montage auf PC - Board Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 850 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 460 ... 1080 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A0.55 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 1 x 1 mm x Abmessung der Chipflche mm 2008-07-30 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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OS4
OSRAM DS
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OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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