Product Information

TIP112G

TIP112G electronic component of ON Semiconductor

Datasheet
Darlington Transistors 2A 100V Bipolar Power NPN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

17: USD 0.4792 ea
Line Total: USD 8.15

91 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 17  Multiples: 1
Pack Size: 1
Availability Price Quantity
91 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

TIP112G
ON Semiconductor

1 : USD 0.5041
10 : USD 0.4792
100 : USD 0.4695
500 : USD 0.4695
1000 : USD 0.4695

325 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

TIP112G
ON Semiconductor

1 : USD 0.512

91 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 17
Multiples : 1

Stock Image

TIP112G
ON Semiconductor

17 : USD 0.4792
100 : USD 0.4695

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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The TIP112G Power NPN Darlington Transistor is manufactured by ON Semiconductor and is a bipolar power transistor in a Darlington configuration. The device has a maximum current rating of 2 Amps, and maximum breakdown voltage of 100V. It is designed for various medium to high power switching and amplifier applications. It is a complete monolithic design that includes the NPN transistors and built-in resistors. Additionally, the device has a low saturation voltage, high hFE, robust and reliable construction, and can be used at frequencies up to 5 MHz. This device can also be used to replace a pair of discrete NPN transistors in a Darlington configuration.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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